Koupit IXFP4N85XM s BYCHPS
Koupit se zárukou
IXFP4N85XM
- Part Number:
- IXFP4N85XM
- Výrobce:
- IXYS Corporation
- Popis:
- MOSFET N-CH 80V 3.5A TO220
- Stav volného vedení / RoHS:
- Bez olova / V souladu RoHS
- dostupné množství:
- 14239 Pieces
- Datový list:
- IXFP4N85XM.pdf
Úvod
BYCHIPS je distribuční odrůda pro IXFP4N85XM, máme zásoby pro okamžitou přepravu a také k dispozici pro dlouhodobé zásobování. Zašlete nám svůj plán nákupu IXFP4N85XM e-mailem vám poskytneme nejlepší cenu podle svého plánu.
Specifikace
| Vgs (th) (max) 'Id: | 5.5V @ 250µA |
|---|---|
| Vgs (Max): | ±30V |
| Technika: | MOSFET (Metal Oxide) |
| Dodavatel zařízení Package: | TO-220 |
| Série: | HiPerFET™ |
| RDS On (Max) @ Id, Vgs: | 2.5 Ohm @ 2A, 10V |
| Ztráta energie (Max): | 35W (Tc) |
| Paket / krabice: | TO-220-3 Full Pack |
| Provozní teplota: | -55°C ~ 150°C (TJ) |
| Typ montáže: | Through Hole |
| Úroveň citlivosti na vlhkost (MSL): | 1 (Unlimited) |
| Výrobní standardní doba výroby: | 10 Weeks |
| Výrobní číslo výrobce: | IXFP4N85XM |
| Vstupní kapacita (Ciss) (Max) @ Vds: | 247pF @ 25V |
| Nabíjení brány (Qg) (Max) @ Vgs: | 7nC @ 10V |
| Typ FET: | N-Channel |
| FET Feature: | - |
| Rozšířený popis: | N-Channel 850V 3.5A (Tc) 35W (Tc) Through Hole TO-220 |
| Napětí měniče (max. Zap. RDS, min. Zap. Zap.): | 10V |
| Drain na zdroj napětí (Vdss): | 850V |
| Popis: | MOSFET N-CH 80V 3.5A TO220 |
| Proud - kontinuální odtok (Id) @ 25 ° C: | 3.5A (Tc) |
| Email: | [email protected] |
Související díly pro IXFP4N85XM
| Obraz | Part Number | Výrobci | Popis | Pohled |
|---|---|---|---|---|
 |
IPP80P03P4L07AKSA1 | Infineon Technologies | MOSFET P-CH 30V 80A TO220-3 | Dotaz |
 |
IRFP460NPBF | Vishay Siliconix | MOSFET N-CH 500V 20A TO-247AC | Dotaz |
 |
APT50M65B2FLLG | Microsemi Corporation | MOSFET N-CH 500V 67A T-MAX | Dotaz |
 |
IXFP4N85X | IXYS | MOSFET N-CH 850V 3.5A TO220-3 | Dotaz |
 |
IRF7204PBF | Infineon Technologies | MOSFET P-CH 20V 5.3A 8-SOIC | Dotaz |
 |
SI1051X-T1-E3 | Vishay Siliconix | MOSFET P-CH 8V 1.2A SC89-6 | Dotaz |
 |
IXFP4N100Q | IXYS | MOSFET N-CH 1000V 4A TO-220 | Dotaz |
|
IXFP4N60P3 | IXYS | MOSFET N-CH 600V 4A TO-220AB | Dotaz |
|
BSO300N03S | Infineon Technologies | MOSFET N-CH 30V 5.7A 8DSO | Dotaz |
|
IXFP4N100P | IXYS | MOSFET N-CH 1000V 4A TO-220 | Dotaz |
 |
SI7718DN-T1-GE3 | Vishay Siliconix | MOSFET N-CH 30V 35A 1212-8 | Dotaz |
 |
FDS3682 | Fairchild/ON Semiconductor | MOSFET N-CH 100V 6A 8SOIC | Dotaz |
 |
SI7856ADP-T1-E3 | Vishay Siliconix | MOSFET N-CH 30V 15A PPAK SO-8 | Dotaz |
 |
SI4862DY-T1-GE3 | Vishay Siliconix | MOSFET N-CH 16V 17A 8-SOIC | Dotaz |
 |
STP6N62K3 | STMicroelectronics | MOSFET N-CH 620V 5.5A TO-220 | Dotaz |
 |
STU65N3LLH5 | STMicroelectronics | MOSFET N CH 30V 65A IPAK | Dotaz |
|
STP13NK60Z | STMicroelectronics | MOSFET N-CH 600V 13A TO-220 | Dotaz |
 |
ZXMN2F34FHTA | Diodes Incorporated | MOSFET N-CH 20V 3.4A SOT23-3 | Dotaz |
Latest News
- Xilinx Ships Industry's First 16nm All Programmable MPSoC Ahead of Schedule
- Xilinx and Samsung Jointly Enable the World's First 5G NR Commercial Deployment
- TI to reduce costs in Wireless business; OMAP™ processors and wireless connectivity solutions will focus on embedded markets
- TI's Peter Balyta to head Education Technology division; Melendy Lovett to retire
- Janet Clark to join TI board of directors
- TI unveils DLP® 0.66-inch 4K ultra-high definition (UHD) chip, enabling more affordable large screen projection displays for home, business and education
- GCHQ Director calls for international cyber pact
- Embedded World: Arm introduces fourth security element to PSA
- Last chance: Nominate BrightSparks before 28 February
- Embedded World 2019: Get the full Electronics Weekly Guide
- "Xcell Journal" Special Edition: Xilinx Customers Shape a Brilliant Future
- Xilinx Launches Public Access of the SDSoC Development Environment to Expand Zynq SoC User Base to Broad Community of Systems and Software Engineers