Koupit IPD65R660CFDBTMA1 s BYCHPS
Koupit se zárukou
IPD65R660CFDBTMA1
- Part Number:
- IPD65R660CFDBTMA1
- Popis:
- MOSFET N-CH 650V 6A TO252
- Stav volného vedení / RoHS:
- Bez olova / V souladu RoHS
- dostupné množství:
- 18588 Pieces
- Datový list:
- IPD65R660CFDBTMA1.pdf
Úvod
BYCHIPS je distribuční odrůda pro IPD65R660CFDBTMA1, máme zásoby pro okamžitou přepravu a také k dispozici pro dlouhodobé zásobování. Zašlete nám svůj plán nákupu IPD65R660CFDBTMA1 e-mailem vám poskytneme nejlepší cenu podle svého plánu.
Specifikace
| Vgs (th) (max) 'Id: | 4.5V @ 200µA |
|---|---|
| Technika: | MOSFET (Metal Oxide) |
| Dodavatel zařízení Package: | PG-TO252-3 |
| Série: | CoolMOS™ |
| RDS On (Max) @ Id, Vgs: | 660 mOhm @ 2.1A, 10V |
| Ztráta energie (Max): | 62.5W (Tc) |
| Obal: | Tape & Reel (TR) |
| Paket / krabice: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Ostatní jména: | IPD65R660CFD IPD65R660CFD-ND SP000745024 |
| Provozní teplota: | -55°C ~ 150°C (TJ) |
| Typ montáže: | Surface Mount |
| Úroveň citlivosti na vlhkost (MSL): | 1 (Unlimited) |
| Výrobní standardní doba výroby: | 16 Weeks |
| Výrobní číslo výrobce: | IPD65R660CFDBTMA1 |
| Vstupní kapacita (Ciss) (Max) @ Vds: | 615pF @ 100V |
| Nabíjení brány (Qg) (Max) @ Vgs: | 22nC @ 10V |
| Typ FET: | N-Channel |
| FET Feature: | - |
| Rozšířený popis: | N-Channel 650V 6A (Tc) 62.5W (Tc) Surface Mount PG-TO252-3 |
| Drain na zdroj napětí (Vdss): | 650V |
| Popis: | MOSFET N-CH 650V 6A TO252 |
| Proud - kontinuální odtok (Id) @ 25 ° C: | 6A (Tc) |
| Email: | [email protected] |
Související díly pro IPD65R660CFDBTMA1
| Obraz | Part Number | Výrobci | Popis | Pohled |
|---|---|---|---|---|
 |
IPD65R650CEAUMA1 | Infineon Technologies | MOSFET N-CH 650V 7A TO-252 | Dotaz |
|
IPD65R660CFDATMA1 | Infineon Technologies | MOSFET N-CH 650V 6A TO252 | Dotaz |
|
IPD65R600E6ATMA1 | Infineon Technologies | MOSFET N-CH 650V 7.3A TO252-3 | Dotaz |
|
IPD65R600E6BTMA1 | Infineon Technologies | MOSFET N-CH 650V 7.3A TO252-3 | Dotaz |
|
IPD65R1K4CFDATMA1 | Infineon Technologies | MOSFET N-CH 650V 2.8A TO-252 | Dotaz |
|
IPD65R600C6 | Infineon Technologies | MOSFET N-CH 650V 7.3A TO252 | Dotaz |
|
IPD65R650CEATMA1 | Infineon Technologies | MOSFET N-CH 650V 10.1A TO252 | Dotaz |
|
IPD65R400CEAUMA1 | Infineon Technologies | MOSFET N-CH 650V TO-252 | Dotaz |
|
IPD65R660CFDAATMA1 | Infineon Technologies | MOSFET N-CH TO252-3 | Dotaz |
|
IPD65R380C6BTMA1 | Infineon Technologies | MOSFET N-CH 650V 10.6A TO252-3 | Dotaz |
 |
IPD65R600C6ATMA1 | Infineon Technologies | LOW POWER_LEGACY | Dotaz |
|
IPD65R600C6BTMA1 | Infineon Technologies | MOSFET N-CH 650V 7.3A TO252 | Dotaz |
|
IPD65R380E6ATMA1 | Infineon Technologies | MOSFET N-CH 650V 10.6A TO252 | Dotaz |
Latest News
- Xilinx Ships Industry's First 16nm All Programmable MPSoC Ahead of Schedule
- Xilinx and Samsung Jointly Enable the World's First 5G NR Commercial Deployment
- TI to reduce costs in Wireless business; OMAP™ processors and wireless connectivity solutions will focus on embedded markets
- TI's Peter Balyta to head Education Technology division; Melendy Lovett to retire
- Janet Clark to join TI board of directors
- TI unveils DLP® 0.66-inch 4K ultra-high definition (UHD) chip, enabling more affordable large screen projection displays for home, business and education
- GCHQ Director calls for international cyber pact
- Embedded World: Arm introduces fourth security element to PSA
- Last chance: Nominate BrightSparks before 28 February
- Embedded World 2019: Get the full Electronics Weekly Guide
- "Xcell Journal" Special Edition: Xilinx Customers Shape a Brilliant Future
- Xilinx Launches Public Access of the SDSoC Development Environment to Expand Zynq SoC User Base to Broad Community of Systems and Software Engineers