Koupit IPD65R650CEATMA1 s BYCHPS
Koupit se zárukou
IPD65R650CEATMA1
- Part Number:
- IPD65R650CEATMA1
- Popis:
- MOSFET N-CH 650V 10.1A TO252
- Stav volného vedení / RoHS:
- Bez olova / V souladu RoHS
- dostupné množství:
- 16414 Pieces
- Datový list:
- IPD65R650CEATMA1.pdf
Úvod
BYCHIPS je distribuční odrůda pro IPD65R650CEATMA1, máme zásoby pro okamžitou přepravu a také k dispozici pro dlouhodobé zásobování. Zašlete nám svůj plán nákupu IPD65R650CEATMA1 e-mailem vám poskytneme nejlepší cenu podle svého plánu.
Specifikace
| Vgs (th) (max) 'Id: | 3.5V @ 0.21mA |
|---|---|
| Technika: | MOSFET (Metal Oxide) |
| Dodavatel zařízení Package: | PG-TO252-3 |
| Série: | CoolMOS™ |
| RDS On (Max) @ Id, Vgs: | 650 mOhm @ 2.1A, 10V |
| Ztráta energie (Max): | 86W (Tc) |
| Obal: | Tape & Reel (TR) |
| Paket / krabice: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Ostatní jména: | SP001295798 |
| Provozní teplota: | -40°C ~ 150°C (TJ) |
| Typ montáže: | Surface Mount |
| Úroveň citlivosti na vlhkost (MSL): | 1 (Unlimited) |
| Výrobní číslo výrobce: | IPD65R650CEATMA1 |
| Vstupní kapacita (Ciss) (Max) @ Vds: | 440pF @ 100V |
| Nabíjení brány (Qg) (Max) @ Vgs: | 23nC @ 10V |
| Typ FET: | N-Channel |
| FET Feature: | Super Junction |
| Rozšířený popis: | N-Channel 650V 10.1A (Tc) 86W (Tc) Surface Mount PG-TO252-3 |
| Drain na zdroj napětí (Vdss): | 650V |
| Popis: | MOSFET N-CH 650V 10.1A TO252 |
| Proud - kontinuální odtok (Id) @ 25 ° C: | 10.1A (Tc) |
| Email: | [email protected] |
Související díly pro IPD65R650CEATMA1
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