Koupit EPC8010ENGR s BYCHPS
Koupit se zárukou
EPC8010ENGR
- Part Number:
- EPC8010ENGR
- Výrobce:
- EPC
- Popis:
- TRANS GAN 100V 2.7A BUMPED DIE
- Stav volného vedení / RoHS:
- Bez olova / V souladu RoHS
- dostupné množství:
- 16037 Pieces
- Datový list:
- EPC8010ENGR.pdf
Úvod
BYCHIPS je distribuční odrůda pro EPC8010ENGR, máme zásoby pro okamžitou přepravu a také k dispozici pro dlouhodobé zásobování. Zašlete nám svůj plán nákupu EPC8010ENGR e-mailem vám poskytneme nejlepší cenu podle svého plánu.
Specifikace
| Vgs (th) (max) 'Id: | 2.5V @ 250µA |
|---|---|
| Technika: | GaNFET (Gallium Nitride) |
| Dodavatel zařízení Package: | Die |
| Série: | eGaN® |
| RDS On (Max) @ Id, Vgs: | 160 mOhm @ 500mA, 5V |
| Ztráta energie (Max): | - |
| Obal: | Tray |
| Paket / krabice: | - |
| Ostatní jména: | 917-EPC8010ENGR EPC8010ENGJ |
| Provozní teplota: | -40°C ~ 150°C (TJ) |
| Typ montáže: | Surface Mount |
| Úroveň citlivosti na vlhkost (MSL): | 1 (Unlimited) |
| Výrobní číslo výrobce: | EPC8010ENGR |
| Vstupní kapacita (Ciss) (Max) @ Vds: | 55pF @ 50V |
| Nabíjení brány (Qg) (Max) @ Vgs: | 0.48nC @ 5V |
| Typ FET: | N-Channel |
| FET Feature: | - |
| Rozšířený popis: | N-Channel 100V 2.7A (Ta) Surface Mount Die |
| Drain na zdroj napětí (Vdss): | 100V |
| Popis: | TRANS GAN 100V 2.7A BUMPED DIE |
| Proud - kontinuální odtok (Id) @ 25 ° C: | 2.7A (Ta) |
| Email: | [email protected] |
Související díly pro EPC8010ENGR
| Obraz | Part Number | Výrobci | Popis | Pohled |
|---|---|---|---|---|
 |
EPC8010 | EPC | TRANS GAN 100V 2.7A BUMPED DIE | Dotaz |
|
EPC8007ENGR | EPC | TRANS GAN 40V 3.8A BUMPED DIE | Dotaz |
|
EPC8005ENGR | EPC | TRANS GAN 65V 2.9A BUMPED DIE | Dotaz |
 |
AOL1412 | Alpha & Omega Semiconductor Inc. | MOSFET N-CH 30V 85A 8ULTRASO | Dotaz |
 |
IRF610STRR | Vishay Siliconix | MOSFET N-CH 200V 3.3A D2PAK | Dotaz |
 |
2SK3746-1E | ON Semiconductor | MOSFET N-CH 1500V 2A | Dotaz |
 |
NTD60N02R-35G | ON Semiconductor | MOSFET N-CH 25V 8.5A IPAK | Dotaz |
 |
HUFA75329S3S | Fairchild/ON Semiconductor | MOSFET N-CH 55V 49A D2PAK | Dotaz |
|
EPC8002ENGR | EPC | TRANS GAN 65V 2A BUMPED DIE | Dotaz |
|
EPC8004 | EPC | TRANS GAN 40V 2.7A BUMPED DIE | Dotaz |
 |
NDD05N50ZT4G | ON Semiconductor | MOSFET N-CH 500V 5A DPAK | Dotaz |
|
EPC8009ENGR | EPC | TRANS GAN 65V 4.1A BUMPED DIE | Dotaz |
 |
IRF7807APBF | Infineon Technologies | MOSFET N-CH 30V 8.3A 8-SOIC | Dotaz |
|
EPC8008ENGR | EPC | TRANS GAN 40V 2.7A BUMPED DIE | Dotaz |
|
EPC8009 | EPC | TRANS GAN 65V 2.7A BUMPED DIE | Dotaz |
|
EPC8003ENGR | EPC | TRANS GAN 100V 2.5A BUMPED DIE | Dotaz |
 |
EPC8002 | EPC | TRANS GAN 65V 2.7A BUMPED DIE | Dotaz |
|
EPC8004ENGR | EPC | TRANS GAN 40V 4.4A BUMPED DIE | Dotaz |
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