Koupit DMN10H170SFG-7 s BYCHPS
Koupit se zárukou
DMN10H170SFG-7
- Part Number:
- DMN10H170SFG-7
- Výrobce:
- Diodes Incorporated
- Popis:
- MOSFET N-CH 100V 2.9A POWERDI
- Stav volného vedení / RoHS:
- Bez olova / V souladu RoHS
- dostupné množství:
- 13118 Pieces
- Datový list:
- DMN10H170SFG-7.pdf
Úvod
BYCHIPS je distribuční odrůda pro DMN10H170SFG-7, máme zásoby pro okamžitou přepravu a také k dispozici pro dlouhodobé zásobování. Zašlete nám svůj plán nákupu DMN10H170SFG-7 e-mailem vám poskytneme nejlepší cenu podle svého plánu.
Specifikace
| Vgs (th) (max) 'Id: | 3V @ 250µA |
|---|---|
| Vgs (Max): | ±20V |
| Technika: | MOSFET (Metal Oxide) |
| Dodavatel zařízení Package: | PowerDI3333-8 |
| Série: | - |
| RDS On (Max) @ Id, Vgs: | 122 mOhm @ 3.3A, 10V |
| Ztráta energie (Max): | 940mW (Ta) |
| Obal: | Tape & Reel (TR) |
| Paket / krabice: | 8-PowerWDFN |
| Ostatní jména: | DMN10H170SFG-7DITR DMN10H170SFG-7TR DMN10H170SFG-7TR-ND |
| Provozní teplota: | -55°C ~ 150°C (TJ) |
| Typ montáže: | Surface Mount |
| Úroveň citlivosti na vlhkost (MSL): | 1 (Unlimited) |
| Výrobní standardní doba výroby: | 16 Weeks |
| Výrobní číslo výrobce: | DMN10H170SFG-7 |
| Vstupní kapacita (Ciss) (Max) @ Vds: | 870.7pF @ 25V |
| Nabíjení brány (Qg) (Max) @ Vgs: | 14.9nC @ 10V |
| Typ FET: | N-Channel |
| FET Feature: | - |
| Rozšířený popis: | N-Channel 100V 2.9A (Ta), 8.5A (Tc) 940mW (Ta) Surface Mount PowerDI3333-8 |
| Napětí měniče (max. Zap. RDS, min. Zap. Zap.): | 4.5V, 10V |
| Drain na zdroj napětí (Vdss): | 100V |
| Popis: | MOSFET N-CH 100V 2.9A POWERDI |
| Proud - kontinuální odtok (Id) @ 25 ° C: | 2.9A (Ta), 8.5A (Tc) |
| Email: | [email protected] |
Související díly pro DMN10H170SFG-7
| Obraz | Part Number | Výrobci | Popis | Pohled |
|---|---|---|---|---|
 |
DMN10H170SFG-13 | Diodes Incorporated | MOSFET N-CH 100V 2.9A POWERDI | Dotaz |
 |
DMN10H170SFDE-13 | Diodes Incorporated | MOSFET N-CH 100V 2.9A 6UDFN | Dotaz |
 |
DMN10H170SVT-7 | Diodes Incorporated | MOSFET N-CH 100V 2.6A TSOT26 | Dotaz |
 |
DMN10H120SE-13 | Diodes Incorporated | MOSFET N-CH 100V 3.6A SOT223 | Dotaz |
|
DMN10H170SVTQ-7 | Diodes Incorporated | MOSFET N-CH 100V 2.6A TSOT26 | Dotaz |
 |
DMN10H170SK3-13 | Diodes Incorporated | MOSFET N-CH 100V 12A TO252 | Dotaz |
|
DMN10H170SVT-13 | Diodes Incorporated | MOSFET N-CH 100V 2.6A TSOT26 | Dotaz |
|
DMN10H170SFDE-7 | Diodes Incorporated | MOSFET N-CH 100V 2.9A 6UDFN | Dotaz |
|
DMN10H170SVTQ-13 | Diodes Incorporated | MOSFET N-CH 100V TSOT26 | Dotaz |
|
DMN10H120SFG-7 | Diodes Incorporated | MOSFET N-CH 100V 3.8A POWERDI | Dotaz |
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