Koupit TN5335K1-G s BYCHPS
Koupit se zárukou
TN5335K1-G
- Part Number:
- TN5335K1-G
- Výrobce:
- Micrel / Microchip Technology
- Popis:
- MOSFET N-CH 350V 0.11A SOT23-3
- Stav volného vedení / RoHS:
- Bez olova / V souladu RoHS
- dostupné množství:
- 17861 Pieces
- Datový list:
- TN5335K1-G.pdf
Úvod
BYCHIPS je distribuční odrůda pro TN5335K1-G, máme zásoby pro okamžitou přepravu a také k dispozici pro dlouhodobé zásobování. Zašlete nám svůj plán nákupu TN5335K1-G e-mailem vám poskytneme nejlepší cenu podle svého plánu.
Specifikace
| Vgs (th) (max) 'Id: | 2V @ 1mA |
|---|---|
| Technika: | MOSFET (Metal Oxide) |
| Dodavatel zařízení Package: | SOT-23 (TO-236AB) |
| Série: | - |
| RDS On (Max) @ Id, Vgs: | 15 Ohm @ 200mA, 10V |
| Ztráta energie (Max): | 360mW (Ta) |
| Obal: | Tape & Reel (TR) |
| Paket / krabice: | TO-236-3, SC-59, SOT-23-3 |
| Provozní teplota: | -55°C ~ 150°C (TJ) |
| Typ montáže: | Surface Mount |
| Úroveň citlivosti na vlhkost (MSL): | 1 (Unlimited) |
| Výrobní standardní doba výroby: | 13 Weeks |
| Výrobní číslo výrobce: | TN5335K1-G |
| Vstupní kapacita (Ciss) (Max) @ Vds: | 110pF @ 25V |
| Nabíjení brány (Qg) (Max) @ Vgs: | - |
| Typ FET: | N-Channel |
| FET Feature: | - |
| Rozšířený popis: | N-Channel 350V 110mA (Tj) 360mW (Ta) Surface Mount SOT-23 (TO-236AB) |
| Drain na zdroj napětí (Vdss): | 350V |
| Popis: | MOSFET N-CH 350V 0.11A SOT23-3 |
| Proud - kontinuální odtok (Id) @ 25 ° C: | 110mA (Tj) |
| Email: | [email protected] |
Související díly pro TN5335K1-G
| Obraz | Part Number | Výrobci | Popis | Pohled |
|---|---|---|---|---|
 |
FQPF30N06L | Fairchild/ON Semiconductor | MOSFET N-CH 60V 22.5A TO-220F | Dotaz |
 |
STD12N50DM2 | STMicroelectronics | N-CHANNEL 500 V, 0.35 OHM TYP., | Dotaz |
 |
TN5335N8-G | Microchip Technology | MOSFET N-CH 350V 0.23A SOT89-3 | Dotaz |
 |
IXFX20N120 | IXYS | MOSFET N-CH 1200V 20A ISOPLUS247 | Dotaz |
 |
MGSF1N03LT3G | ON Semiconductor | MOSFET N-CH 30V 1.6A SOT-23 | Dotaz |
 |
NX7002BKR | Nexperia USA Inc. | MOSFET 2N-CH 60V TO-236AB | Dotaz |
 |
IXFR26N60Q | IXYS | MOSFET N-CH 600V 23A ISOPLUS247 | Dotaz |
 |
SPB80N03S2L-05 | Infineon Technologies | MOSFET N-CH 30V 80A D2PAK | Dotaz |
 |
IXFH30N40Q | IXYS | MOSFET N-CH 400V 30A TO-247 | Dotaz |
 |
DMN10H099SFG-7 | Diodes Incorporated | MOSFET N-CH 100V 4.2A PWRDI3333 | Dotaz |
 |
BSP030,115 | Nexperia USA Inc. | MOSFET N-CH 30V 10A SOT223 | Dotaz |
|
STB21NM50N | STMicroelectronics | MOSFET N-CH 500V 18A D2PAK | Dotaz |
 |
CSD18509Q5B | Texas Instruments | MOSFET N-CH 40V 100A 8VSON | Dotaz |
 |
IRFH7440TRPBF | Infineon Technologies | MOSFET N-CH 40V 85A 8PQFN | Dotaz |
 |
STF11N50M2 | STMicroelectronics | MOSFET N-CH 500V 8A TO220FP | Dotaz |
|
SIHB28N60EF-GE3 | Vishay Siliconix | MOSFET N-CH 600V 28A D2PAK | Dotaz |
|
BSC026N02KS G | Infineon Technologies | MOSFET N-CH 20V 100A TDSON-8 | Dotaz |
|
IRF3707SPBF | Infineon Technologies | MOSFET N-CH 30V 62A D2PAK | Dotaz |
 |
RCX220N25 | Rohm Semiconductor | MOSFET N-CH 250V 22A TO220 | Dotaz |
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