Koupit TK31J60W,S1VQ s BYCHPS
Koupit se zárukou
TK31J60W,S1VQ
- Part Number:
- TK31J60W,S1VQ
- Výrobce:
- Toshiba Semiconductor
- Popis:
- MOSFET N CH 600V 30.8A TO-3P(N)
- Stav volného vedení / RoHS:
- Bez olova / V souladu RoHS
- dostupné množství:
- 12397 Pieces
- Datový list:
- TK31J60W,S1VQ.pdf
Úvod
BYCHIPS je distribuční odrůda pro TK31J60W,S1VQ, máme zásoby pro okamžitou přepravu a také k dispozici pro dlouhodobé zásobování. Zašlete nám svůj plán nákupu TK31J60W,S1VQ e-mailem vám poskytneme nejlepší cenu podle svého plánu.
Specifikace
| Vgs (th) (max) 'Id: | 3.7V @ 1.5mA |
|---|---|
| Vgs (Max): | ±30V |
| Technika: | MOSFET (Metal Oxide) |
| Dodavatel zařízení Package: | TO-3P(N) |
| Série: | DTMOSIV |
| RDS On (Max) @ Id, Vgs: | 88 mOhm @ 15.4A, 10V |
| Ztráta energie (Max): | 230W (Tc) |
| Obal: | Tube |
| Paket / krabice: | TO-3P-3, SC-65-3 |
| Ostatní jména: | TK31J60W,S1VQ(O TK31J60WS1VQ |
| Provozní teplota: | 150°C (TJ) |
| Typ montáže: | Through Hole |
| Úroveň citlivosti na vlhkost (MSL): | 1 (Unlimited) |
| Výrobní standardní doba výroby: | 16 Weeks |
| Výrobní číslo výrobce: | TK31J60W,S1VQ |
| Vstupní kapacita (Ciss) (Max) @ Vds: | 3000pF @ 300V |
| Nabíjení brány (Qg) (Max) @ Vgs: | 86nC @ 10V |
| Typ FET: | N-Channel |
| FET Feature: | Super Junction |
| Rozšířený popis: | N-Channel 600V 30.8A (Ta) 230W (Tc) Through Hole TO-3P(N) |
| Napětí měniče (max. Zap. RDS, min. Zap. Zap.): | 10V |
| Drain na zdroj napětí (Vdss): | 600V |
| Popis: | MOSFET N CH 600V 30.8A TO-3P(N) |
| Proud - kontinuální odtok (Id) @ 25 ° C: | 30.8A (Ta) |
| Email: | [email protected] |
Související díly pro TK31J60W,S1VQ
| Obraz | Part Number | Výrobci | Popis | Pohled |
|---|---|---|---|---|
 |
CSD18563Q5AT | Texas Instruments | MOSFET N-CH 60V 100A 8SON | Dotaz |
 |
NP50P03YDG-E1-AY | Renesas Electronics America | MOSFET P-CH 30V 50A 8HSON | Dotaz |
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IXTP15N50L2 | IXYS | MOSFET N-CH 500V 15A TO-220 | Dotaz |
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IXFB210N20P | IXYS | MOSFET N-CH 200V 210A PLUS264 | Dotaz |
 |
STB6NK60Z-1 | STMicroelectronics | MOSFET N-CH 600V 6A I2PAK | Dotaz |
 |
TK31J60W5,S1VQ | Toshiba Semiconductor and Storage | MOSFET N-CH 600V 30.8A TO-3P(N) | Dotaz |
 |
IXTA200N055T2 | IXYS | MOSFET N-CH 55V 200A TO-263 | Dotaz |
 |
IRF7460 | Infineon Technologies | MOSFET N-CH 20V 12A 8-SOIC | Dotaz |
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DMN4010LFG-7 | Diodes Incorporated | MOSFET N-CH 40V 11.5A PWDI3333-8 | Dotaz |
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IXTV250N075TS | IXYS | MOSFET N-CH 75V 250A PLUS220SMD | Dotaz |
 |
NVMFS5113PLT1G | ON Semiconductor | MOSFET P-CH 60V 64A SO8FL | Dotaz |
 |
AOT472 | Alpha & Omega Semiconductor Inc. | MOSFET N-CH 75V 10A TO220 | Dotaz |
 |
SI7336ADP-T1-GE3 | Vishay Siliconix | MOSFET N-CH 30V 30A PPAK SO-8 | Dotaz |
 |
NVD5802NT4G-VF01 | ON Semiconductor | MOSFET N-CH 40V 16.4A DPAK | Dotaz |
 |
SI5433BDC-T1-GE3 | Vishay Siliconix | MOSFET P-CH 20V 4.8A 1206-8 | Dotaz |
 |
PSMN4R8-100PSEQ | Nexperia USA Inc. | MOSFET N-CH 100V TO220AB | Dotaz |
 |
STFW40N60M2 | STMicroelectronics | MOSFET N-CH 600V 34A TO-3PF | Dotaz |
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