Koupit TC6320K6-G s BYCHPS
Koupit se zárukou
TC6320K6-G
- Part Number:
- TC6320K6-G
- Výrobce:
- Micrel / Microchip Technology
- Popis:
- MOSFET N/P-CH 200V 8VDFN
- Stav volného vedení / RoHS:
- Bez olova / V souladu RoHS
- dostupné množství:
- 18035 Pieces
- Datový list:
- TC6320K6-G.pdf
Úvod
BYCHIPS je distribuční odrůda pro TC6320K6-G, máme zásoby pro okamžitou přepravu a také k dispozici pro dlouhodobé zásobování. Zašlete nám svůj plán nákupu TC6320K6-G e-mailem vám poskytneme nejlepší cenu podle svého plánu.
Specifikace
| Vgs (th) (max) 'Id: | 2V @ 1mA |
|---|---|
| Dodavatel zařízení Package: | 8-DFN (4x4) |
| Série: | - |
| RDS On (Max) @ Id, Vgs: | 7 Ohm @ 1A, 10V |
| Power - Max: | - |
| Obal: | Tape & Reel (TR) |
| Paket / krabice: | 8-VDFN Exposed Pad |
| Ostatní jména: | TC6320K6-G-ND TC6320K6-GTR |
| Provozní teplota: | -55°C ~ 150°C (TJ) |
| Typ montáže: | Surface Mount |
| Úroveň citlivosti na vlhkost (MSL): | 1 (Unlimited) |
| Výrobní standardní doba výroby: | 12 Weeks |
| Výrobní číslo výrobce: | TC6320K6-G |
| Vstupní kapacita (Ciss) (Max) @ Vds: | 110pF @ 25V |
| Nabíjení brány (Qg) (Max) @ Vgs: | - |
| Typ FET: | N and P-Channel |
| FET Feature: | Standard |
| Rozšířený popis: | Mosfet Array N and P-Channel 200V Surface Mount 8-DFN (4x4) |
| Drain na zdroj napětí (Vdss): | 200V |
| Popis: | MOSFET N/P-CH 200V 8VDFN |
| Proud - kontinuální odtok (Id) @ 25 ° C: | - |
| Email: | [email protected] |
Související díly pro TC6320K6-G
| Obraz | Part Number | Výrobci | Popis | Pohled |
|---|---|---|---|---|
 |
DMC6070LND-7 | Diodes Incorporated | MOSFET N/P-CH 60V 8POWERDI | Dotaz |
 |
TC6320TG-G | Microchip Technology | MOSFET N/P-CH 200V 8SOIC | Dotaz |
 |
TC6321T-V/9U | Microchip Technology | MOSFET ARRAY N/P-CH 200V 8VDFN | Dotaz |
 |
GWM120-0075X1-SMD | IXYS | MOSFET 6N-CH 75V 110A ISOPLUS | Dotaz |
 |
TPC8223-H,LQ(S | Toshiba Semiconductor and Storage | MOSFET 2N-CH 30V 9A 8SOP | Dotaz |
 |
VQ2001P | Vishay Siliconix | MOSFET 4P-CH 30V 0.6A 14DIP | Dotaz |
 |
SSM6P49NU,LF | Toshiba Semiconductor and Storage | MOSFET 2P-CH 20V 4A 2-1Y1A | Dotaz |
|
SI4814BDY-T1-E3 | Vishay Siliconix | MOSFET 2N-CH 30V 10A 8SOIC | Dotaz |
 |
DMP3056LSD-13 | Diodes Incorporated | MOSFET 2P-CH 30V 6.9A 8-SOIC | Dotaz |
 |
TC8020K6-G | Microchip Technology | MOSFET 6N/6P-CH 200V 56VQFN | Dotaz |
 |
SI7940DP-T1-E3 | Vishay Siliconix | MOSFET 2N-CH 12V 7.6A PPAK SO-8 | Dotaz |
 |
ECH8662-TL-H | ON Semiconductor | MOSFET 2N-CH 40V 6.5A ECH8 | Dotaz |
 |
APTC80H29T3G | Microsemi Corporation | MOSFET 4N-CH 800V 15A SP3 | Dotaz |
 |
APTC80TA15PG | Microsemi Corporation | MOSFET 6N-CH 800V 28A SP6P | Dotaz |
Latest News
- Xilinx Ships Industry's First 16nm All Programmable MPSoC Ahead of Schedule
- Xilinx and Samsung Jointly Enable the World's First 5G NR Commercial Deployment
- TI to reduce costs in Wireless business; OMAP™ processors and wireless connectivity solutions will focus on embedded markets
- TI's Peter Balyta to head Education Technology division; Melendy Lovett to retire
- Janet Clark to join TI board of directors
- TI unveils DLP® 0.66-inch 4K ultra-high definition (UHD) chip, enabling more affordable large screen projection displays for home, business and education
- GCHQ Director calls for international cyber pact
- Embedded World: Arm introduces fourth security element to PSA
- Last chance: Nominate BrightSparks before 28 February
- Embedded World 2019: Get the full Electronics Weekly Guide
- "Xcell Journal" Special Edition: Xilinx Customers Shape a Brilliant Future
- Xilinx Launches Public Access of the SDSoC Development Environment to Expand Zynq SoC User Base to Broad Community of Systems and Software Engineers