Koupit STW25NM60ND s BYCHPS
Koupit se zárukou
STW25NM60ND
- Part Number:
- STW25NM60ND
- Výrobce:
- ST
- Popis:
- MOSFET N-CH 600V 21A TO-247
- Stav volného vedení / RoHS:
- Bez olova / V souladu RoHS
- dostupné množství:
- 19552 Pieces
- Datový list:
- STW25NM60ND.pdf
Úvod
BYCHIPS je distribuční odrůda pro STW25NM60ND, máme zásoby pro okamžitou přepravu a také k dispozici pro dlouhodobé zásobování. Zašlete nám svůj plán nákupu STW25NM60ND e-mailem vám poskytneme nejlepší cenu podle svého plánu.
Specifikace
| Vgs (th) (max) 'Id: | 5V @ 250µA |
|---|---|
| Vgs (Max): | ±25V |
| Technika: | MOSFET (Metal Oxide) |
| Dodavatel zařízení Package: | TO-247-3 |
| Série: | FDmesh™ II |
| RDS On (Max) @ Id, Vgs: | 160 mOhm @ 10.5A, 10V |
| Ztráta energie (Max): | 160W (Tc) |
| Obal: | Tube |
| Paket / krabice: | TO-247-3 |
| Ostatní jména: | 497-8455-5 |
| Provozní teplota: | 150°C (TJ) |
| Typ montáže: | Through Hole |
| Úroveň citlivosti na vlhkost (MSL): | 1 (Unlimited) |
| Výrobní standardní doba výroby: | 22 Weeks |
| Výrobní číslo výrobce: | STW25NM60ND |
| Vstupní kapacita (Ciss) (Max) @ Vds: | 2400pF @ 50V |
| Nabíjení brány (Qg) (Max) @ Vgs: | 80nC @ 10V |
| Typ FET: | N-Channel |
| FET Feature: | - |
| Rozšířený popis: | N-Channel 600V 21A (Tc) 160W (Tc) Through Hole TO-247-3 |
| Napětí měniče (max. Zap. RDS, min. Zap. Zap.): | 10V |
| Drain na zdroj napětí (Vdss): | 600V |
| Popis: | MOSFET N-CH 600V 21A TO-247 |
| Proud - kontinuální odtok (Id) @ 25 ° C: | 21A (Tc) |
| Email: | [email protected] |
Související díly pro STW25NM60ND
| Obraz | Part Number | Výrobci | Popis | Pohled |
|---|---|---|---|---|
 |
IRFB17N50LPBF | Vishay Siliconix | MOSFET N-CH 500V 16A TO-220AB | Dotaz |
|
IRF9Z14PBF | Vishay Siliconix | MOSFET P-CH 60V 6.7A TO-220AB | Dotaz |
 |
STW25NM50N | STMicroelectronics | MOSFET N-CH 500V 22A TO-247 | Dotaz |
 |
IXFT150N20T | IXYS | MOSFET N-CH 200V 150A TO-268 | Dotaz |
 |
NTB13N10G | ON Semiconductor | MOSFET N-CH 100V 13A D2PAK | Dotaz |
|
STW25NM60N | STMicroelectronics | MOSFET N-CH 600V 21A TO-247 | Dotaz |
|
STW25N80K5 | STMicroelectronics | MOSFET N-CH 800V 19.5A TO247 | Dotaz |
 |
IRFL9110TRPBF | Vishay Siliconix | MOSFET P-CH 100V 1.1A SOT223 | Dotaz |
 |
RSD140P06TL | Rohm Semiconductor | MOSFET P-CH 60V 14A CPT3 | Dotaz |
 |
FQD20N06TM | Fairchild/ON Semiconductor | MOSFET N-CH 60V 16.8A DPAK | Dotaz |
|
IRF3610SPBF | Infineon Technologies | MOSFET N-CH 100V 103A D2PAK | Dotaz |
 |
IRF7832ZTR | Infineon Technologies | MOSFET N-CH 30V 21A 8-SOIC | Dotaz |
 |
R6020KNZ1C9 | Rohm Semiconductor | NCH 600V 20A POWER MOSFET | Dotaz |
|
IXFT94N30T | IXYS | MOSFET N-CH 300V 94A TO-268 | Dotaz |
|
STW25N95K3 | STMicroelectronics | MOSFET N-CH 950V 22A TO247 | Dotaz |
 |
ZVP2110ASTOA | Diodes Incorporated | MOSFET P-CH 100V 0.23A TO92-3 | Dotaz |
 |
IRFP244PBF | Vishay Siliconix | MOSFET N-CH 250V 15A TO-247AC | Dotaz |
 |
HUF75842P3 | Fairchild/ON Semiconductor | MOSFET N-CH 150V 43A TO-220AB | Dotaz |
Latest News
- Xilinx Ships Industry's First 16nm All Programmable MPSoC Ahead of Schedule
- Xilinx and Samsung Jointly Enable the World's First 5G NR Commercial Deployment
- TI to reduce costs in Wireless business; OMAP™ processors and wireless connectivity solutions will focus on embedded markets
- TI's Peter Balyta to head Education Technology division; Melendy Lovett to retire
- Janet Clark to join TI board of directors
- TI unveils DLP® 0.66-inch 4K ultra-high definition (UHD) chip, enabling more affordable large screen projection displays for home, business and education
- GCHQ Director calls for international cyber pact
- Embedded World: Arm introduces fourth security element to PSA
- Last chance: Nominate BrightSparks before 28 February
- Embedded World 2019: Get the full Electronics Weekly Guide
- "Xcell Journal" Special Edition: Xilinx Customers Shape a Brilliant Future
- Xilinx Launches Public Access of the SDSoC Development Environment to Expand Zynq SoC User Base to Broad Community of Systems and Software Engineers