Koupit SPP12N50C3HKSA1 s BYCHPS
Koupit se zárukou
SPP12N50C3HKSA1
- Part Number:
- SPP12N50C3HKSA1
- Popis:
- MOSFET N-CH 560V 11.6A TO-220
- Stav volného vedení / RoHS:
- Bez olova / V souladu RoHS
- dostupné množství:
- 12368 Pieces
- Datový list:
- SPP12N50C3HKSA1.pdf
Úvod
BYCHIPS je distribuční odrůda pro SPP12N50C3HKSA1, máme zásoby pro okamžitou přepravu a také k dispozici pro dlouhodobé zásobování. Zašlete nám svůj plán nákupu SPP12N50C3HKSA1 e-mailem vám poskytneme nejlepší cenu podle svého plánu.
Specifikace
| Vgs (th) (max) 'Id: | 3.9V @ 500µA |
|---|---|
| Technika: | MOSFET (Metal Oxide) |
| Dodavatel zařízení Package: | PG-TO220-3-1 |
| Série: | CoolMOS™ |
| RDS On (Max) @ Id, Vgs: | 380 mOhm @ 7A, 10V |
| Ztráta energie (Max): | 125W (Tc) |
| Obal: | Tube |
| Paket / krabice: | TO-220-3 |
| Ostatní jména: | SP000014459 SPP12N50C3 SPP12N50C3IN SPP12N50C3IN-ND SPP12N50C3X SPP12N50C3XK SPP12N50C3XTIN SPP12N50C3XTIN-ND |
| Provozní teplota: | -55°C ~ 150°C (TJ) |
| Typ montáže: | Through Hole |
| Úroveň citlivosti na vlhkost (MSL): | 1 (Unlimited) |
| Výrobní číslo výrobce: | SPP12N50C3HKSA1 |
| Vstupní kapacita (Ciss) (Max) @ Vds: | 1200pF @ 25V |
| Nabíjení brány (Qg) (Max) @ Vgs: | 49nC @ 10V |
| Typ FET: | N-Channel |
| FET Feature: | - |
| Rozšířený popis: | N-Channel 560V 11.6A (Tc) 125W (Tc) Through Hole PG-TO220-3-1 |
| Drain na zdroj napětí (Vdss): | 560V |
| Popis: | MOSFET N-CH 560V 11.6A TO-220 |
| Proud - kontinuální odtok (Id) @ 25 ° C: | 11.6A (Tc) |
| Email: | [email protected] |
Související díly pro SPP12N50C3HKSA1
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