Koupit SIHF18N50C-E3 s BYCHPS
Koupit se zárukou
SIHF18N50C-E3
- Part Number:
- SIHF18N50C-E3
- Výrobce:
- Vishay / Siliconix
- Popis:
- MOSFET N-CH 500V 18A TO220
- Stav volného vedení / RoHS:
- Bez olova / V souladu RoHS
- dostupné množství:
- 14802 Pieces
- Datový list:
- SIHF18N50C-E3.pdf
Úvod
BYCHIPS je distribuční odrůda pro SIHF18N50C-E3, máme zásoby pro okamžitou přepravu a také k dispozici pro dlouhodobé zásobování. Zašlete nám svůj plán nákupu SIHF18N50C-E3 e-mailem vám poskytneme nejlepší cenu podle svého plánu.
Specifikace
| Vgs (th) (max) 'Id: | 5V @ 250µA |
|---|---|
| Technika: | MOSFET (Metal Oxide) |
| Dodavatel zařízení Package: | TO-220-3 |
| Série: | - |
| RDS On (Max) @ Id, Vgs: | 270 mOhm @ 10A, 10V |
| Ztráta energie (Max): | 38W (Tc) |
| Obal: | Bulk |
| Paket / krabice: | TO-220-3 |
| Provozní teplota: | -55°C ~ 150°C (TJ) |
| Typ montáže: | Through Hole |
| Úroveň citlivosti na vlhkost (MSL): | 1 (Unlimited) |
| Výrobní číslo výrobce: | SIHF18N50C-E3 |
| Vstupní kapacita (Ciss) (Max) @ Vds: | 2942pF @ 25V |
| Nabíjení brány (Qg) (Max) @ Vgs: | 76nC @ 10V |
| Typ FET: | N-Channel |
| FET Feature: | - |
| Rozšířený popis: | N-Channel 500V 18A (Tc) 38W (Tc) Through Hole TO-220-3 |
| Drain na zdroj napětí (Vdss): | 500V |
| Popis: | MOSFET N-CH 500V 18A TO220 |
| Proud - kontinuální odtok (Id) @ 25 ° C: | 18A (Tc) |
| Email: | [email protected] |
Související díly pro SIHF18N50C-E3
| Obraz | Part Number | Výrobci | Popis | Pohled |
|---|---|---|---|---|
 |
IPA60R280C6 | Infineon Technologies | MOSFET N-CH 600V 13.8A TO220-FP | Dotaz |
 |
SIHF15N60E-E3 | Vishay Siliconix | MOSFET N-CH 600V 15A TO220 FULLP | Dotaz |
|
SIHF16N50C-E3 | Vishay Siliconix | MOSFET N-CH 500V 16A TO-220 | Dotaz |
 |
STP30N20 | STMicroelectronics | MOSFET N-CH 200V 30A TO-220 | Dotaz |
|
SIHF18N50D-E3 | Vishay Siliconix | MOSFET N-CH 500V 18A TO-220FP | Dotaz |
 |
FQI5N80TU | Fairchild/ON Semiconductor | MOSFET N-CH 800V 4.8A I2PAK | Dotaz |
 |
SI4128DY-T1-GE3 | Vishay Siliconix | MOSFET N-CH 30V 10.9A 8-SOIC | Dotaz |
|
SIHF10N40D-E3 | Vishay Siliconix | MOSFET N-CH 400V 10A TO-220 FPAK | Dotaz |
|
FQI3N40TU | Fairchild/ON Semiconductor | MOSFET N-CH 400V 2.5A I2PAK | Dotaz |
|
SIHF15N65E-GE3 | Vishay Siliconix | MOSFET N-CH 650V 15A TO220AB | Dotaz |
|
SIHF12N65E-GE3 | Vishay Siliconix | MOSFET N-CH 650V 12A TO-220 | Dotaz |
|
SIHF12N60E-GE3 | Vishay Siliconix | MOSFET N-CH 600V 12A TO220 FULLP | Dotaz |
|
SIHF12N60E-E3 | Vishay Siliconix | MOSFET N-CH 600V 12A TO220 FULLP | Dotaz |
|
SIHF12N50C-E3 | Vishay Siliconix | MOSFET N-CH 500V 12A TO-220 | Dotaz |
|
SIHA20N50E-E3 | Vishay Siliconix | MOSFET N-CH 500V 19A TO-220FP | Dotaz |
|
SIHF15N60E-GE3 | Vishay Siliconix | MOSFET N-CH 600V 15A TO220 FULLP | Dotaz |
 |
STP5NK80Z | STMicroelectronics | MOSFET N-CH 800V 4.3A TO-220 | Dotaz |
Latest News
- Xilinx Ships Industry's First 16nm All Programmable MPSoC Ahead of Schedule
- Xilinx and Samsung Jointly Enable the World's First 5G NR Commercial Deployment
- TI to reduce costs in Wireless business; OMAP™ processors and wireless connectivity solutions will focus on embedded markets
- TI's Peter Balyta to head Education Technology division; Melendy Lovett to retire
- Janet Clark to join TI board of directors
- TI unveils DLP® 0.66-inch 4K ultra-high definition (UHD) chip, enabling more affordable large screen projection displays for home, business and education
- GCHQ Director calls for international cyber pact
- Embedded World: Arm introduces fourth security element to PSA
- Last chance: Nominate BrightSparks before 28 February
- Embedded World 2019: Get the full Electronics Weekly Guide
- "Xcell Journal" Special Edition: Xilinx Customers Shape a Brilliant Future
- Xilinx Launches Public Access of the SDSoC Development Environment to Expand Zynq SoC User Base to Broad Community of Systems and Software Engineers