Koupit SIE836DF-T1-E3 s BYCHPS
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SIE836DF-T1-E3
- Part Number:
- SIE836DF-T1-E3
- Výrobce:
- Vishay / Siliconix
- Popis:
- MOSFET N-CH 200V 18.3A POLARPAK
- Stav volného vedení / RoHS:
- Bez olova / V souladu RoHS
- dostupné množství:
- 12740 Pieces
- Datový list:
- SIE836DF-T1-E3.pdf
Úvod
BYCHIPS je distribuční odrůda pro SIE836DF-T1-E3, máme zásoby pro okamžitou přepravu a také k dispozici pro dlouhodobé zásobování. Zašlete nám svůj plán nákupu SIE836DF-T1-E3 e-mailem vám poskytneme nejlepší cenu podle svého plánu.
Specifikace
| Vgs (th) (max) 'Id: | 4.5V @ 250µA |
|---|---|
| Technika: | MOSFET (Metal Oxide) |
| Dodavatel zařízení Package: | 10-PolarPAK® (SH) |
| Série: | TrenchFET® |
| RDS On (Max) @ Id, Vgs: | 130 mOhm @ 4.1A, 10V |
| Ztráta energie (Max): | 5.2W (Ta), 104W (Tc) |
| Obal: | Tape & Reel (TR) |
| Paket / krabice: | 10-PolarPAK® (SH) |
| Provozní teplota: | -55°C ~ 150°C (TJ) |
| Typ montáže: | Surface Mount |
| Úroveň citlivosti na vlhkost (MSL): | 1 (Unlimited) |
| Výrobní číslo výrobce: | SIE836DF-T1-E3 |
| Vstupní kapacita (Ciss) (Max) @ Vds: | 1200pF @ 100V |
| Nabíjení brány (Qg) (Max) @ Vgs: | 41nC @ 10V |
| Typ FET: | N-Channel |
| FET Feature: | - |
| Rozšířený popis: | N-Channel 200V 18.3A (Tc) 5.2W (Ta), 104W (Tc) Surface Mount 10-PolarPAK® (SH) |
| Drain na zdroj napětí (Vdss): | 200V |
| Popis: | MOSFET N-CH 200V 18.3A POLARPAK |
| Proud - kontinuální odtok (Id) @ 25 ° C: | 18.3A (Tc) |
| Email: | [email protected] |
Související díly pro SIE836DF-T1-E3
| Obraz | Part Number | Výrobci | Popis | Pohled |
|---|---|---|---|---|
 |
IRF510STRL | Vishay Siliconix | MOSFET N-CH 100V 5.6A D2PAK | Dotaz |
 |
SIE836DF-T1-GE3 | Vishay Siliconix | MOSFET N-CH 200V 18.3A POLARPAK | Dotaz |
 |
IXFN90N85X | IXYS | 850V/90A ULT JUNC X-C HIPERFET P | Dotaz |
 |
IXTA220N055T7 | IXYS | MOSFET N-CH 55V 220A TO-263-7 | Dotaz |
 |
IXFR30N50Q | IXYS | MOSFET N-CH 500V 30A ISOPLUS247 | Dotaz |
|
SIE832DF-T1-GE3 | Vishay Siliconix | MOSFET N-CH 40V 50A 10-POLARPAK | Dotaz |
 |
SI7880ADP-T1-E3 | Vishay Siliconix | MOSFET N-CH 30V 40A PPAK SO-8 | Dotaz |
 |
NTLUS4930NTAG | ON Semiconductor | MOSFET N-CH 30V 6.3A UDFN6 | Dotaz |
 |
IRF7402PBF | Infineon Technologies | MOSFET N-CH 20V 6.8A 8-SOIC | Dotaz |
 |
IRFIBC40GLC | Vishay Siliconix | MOSFET N-CH 600V 3.5A TO220FP | Dotaz |
 |
IRF9510L | Vishay Siliconix | MOSFET P-CH 100V 4A TO-262 | Dotaz |
|
SIE830DF-T1-GE3 | Vishay Siliconix | MOSFET N-CH 30V 50A POLARPAK | Dotaz |
|
IPB60R600C6 | Infineon Technologies | MOSFET N-CH 600V 7.3A TO263 | Dotaz |
 |
AOT9N70 | Alpha & Omega Semiconductor Inc. | MOSFET N-CH 700V 9A TO220 | Dotaz |
|
SIE830DF-T1-E3 | Vishay Siliconix | MOSFET N-CH 30V 50A 10-POLARPAK | Dotaz |
 |
STI270N4F3 | STMicroelectronics | MOSFET N-CH 40V 120A I2PAK | Dotaz |
 |
SI9435BDY-T1-GE3 | Vishay Siliconix | MOSFET P-CH 30V 4.1A 8-SOIC | Dotaz |
|
SIE832DF-T1-E3 | Vishay Siliconix | MOSFET N-CH 40V 50A 10-POLARPAK | Dotaz |
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