Koupit SI5856DC-T1-E3 s BYCHPS
Koupit se zárukou
SI5856DC-T1-E3
- Part Number:
- SI5856DC-T1-E3
- Výrobce:
- Vishay / Siliconix
- Popis:
- MOSFET N-CH 20V 4.4A 1206-8
- Stav volného vedení / RoHS:
- Bez olova / V souladu RoHS
- dostupné množství:
- 16073 Pieces
- Datový list:
- SI5856DC-T1-E3.pdf
Úvod
BYCHIPS je distribuční odrůda pro SI5856DC-T1-E3, máme zásoby pro okamžitou přepravu a také k dispozici pro dlouhodobé zásobování. Zašlete nám svůj plán nákupu SI5856DC-T1-E3 e-mailem vám poskytneme nejlepší cenu podle svého plánu.
Specifikace
| Vgs (th) (max) 'Id: | 1V @ 250µA |
|---|---|
| Technika: | MOSFET (Metal Oxide) |
| Dodavatel zařízení Package: | 1206-8 ChipFET™ |
| Série: | TrenchFET® |
| RDS On (Max) @ Id, Vgs: | 40 mOhm @ 4.4A, 4.5V |
| Ztráta energie (Max): | 1.1W (Ta) |
| Obal: | Tape & Reel (TR) |
| Paket / krabice: | 8-SMD, Flat Lead |
| Ostatní jména: | SI5856DC-T1-E3TR |
| Provozní teplota: | -55°C ~ 150°C (TJ) |
| Typ montáže: | Surface Mount |
| Úroveň citlivosti na vlhkost (MSL): | 1 (Unlimited) |
| Výrobní číslo výrobce: | SI5856DC-T1-E3 |
| Vstupní kapacita (Ciss) (Max) @ Vds: | - |
| Nabíjení brány (Qg) (Max) @ Vgs: | 7.5nC @ 4.5V |
| Typ FET: | N-Channel |
| FET Feature: | Schottky Diode (Isolated) |
| Rozšířený popis: | N-Channel 20V 4.4A (Ta) 1.1W (Ta) Surface Mount 1206-8 ChipFET™ |
| Drain na zdroj napětí (Vdss): | 20V |
| Popis: | MOSFET N-CH 20V 4.4A 1206-8 |
| Proud - kontinuální odtok (Id) @ 25 ° C: | 4.4A (Ta) |
| Email: | [email protected] |
Související díly pro SI5856DC-T1-E3
| Obraz | Part Number | Výrobci | Popis | Pohled |
|---|---|---|---|---|
 |
SI5855DC-T1-E3 | Vishay Siliconix | MOSFET P-CH 20V 2.7A 1206-8 | Dotaz |
 |
SN7002N L6327 | Infineon Technologies | MOSFET N-CH 60V 200MA SOT-23 | Dotaz |
 |
APT5010JVRU3 | Microsemi Corporation | MOSFET N-CH 500V 44A SOT227 | Dotaz |
 |
SI5858DU-T1-E3 | Vishay Siliconix | MOSFET N-CH 20V 6A PPAK CHIPFET | Dotaz |
 |
IRF9Z30 | Vishay Siliconix | MOSFET P-CH 50V 18A TO-220AB | Dotaz |
 |
2N6660JTXL02 | Vishay Siliconix | MOSFET N-CH 60V 0.99A TO-205 | Dotaz |
 |
SI4890DY-T1-GE3 | Vishay Siliconix | MOSFET N-CH 30V 11A 8-SOIC | Dotaz |
|
SI5857DU-T1-GE3 | Vishay Siliconix | MOSFET P-CH 20V 6A PPAK CHIPFET | Dotaz |
 |
IXKH35N60C5 | IXYS | MOSFET N-CH 600V 35A TO247AD | Dotaz |
 |
EKV550 | Sanken | MOSFET N-CH 50V TO-220 | Dotaz |
 |
SI5855CDC-T1-E3 | Vishay Siliconix | MOSFET P-CH 20V 3.7A 1206-8 | Dotaz |
|
IRLL024NPBF | Infineon Technologies | MOSFET N-CH 55V 3.1A SOT223 | Dotaz |
|
SI5853CDC-T1-E3 | Vishay Siliconix | MOSFET P-CH 20V 4A 1206-8 | Dotaz |
 |
BS170ZL1G | ON Semiconductor | MOSFET N-CH 60V 0.5A TO-92 | Dotaz |
 |
STB33N65M2 | STMicroelectronics | MOSFET N-CH 650V 24A D2PAK | Dotaz |
|
SI5853DC-T1-E3 | Vishay Siliconix | MOSFET P-CH 20V 2.7A 1206-8 | Dotaz |
|
SI5858DU-T1-GE3 | Vishay Siliconix | MOSFET N-CH 20V 6A PPAK CHIPFET | Dotaz |
 |
IXTQ102N20T | IXYS | MOSFET N-CH 200V 102A TO3P | Dotaz |
|
SI5857DU-T1-E3 | Vishay Siliconix | MOSFET P-CH 20V 6A PPAK CHIPFET | Dotaz |
|
SI5853DDC-T1-E3 | Vishay Siliconix | MOSFET P-CH 20V 4A 1206-8 | Dotaz |
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