Koupit SI1021R-T1-GE3 s BYCHPS
Koupit se zárukou
SI1021R-T1-GE3
- Part Number:
- SI1021R-T1-GE3
- Výrobce:
- Vishay / Siliconix
- Popis:
- MOSFET P-CH 60V 190MA SC-75A
- Stav volného vedení / RoHS:
- Bez olova / V souladu RoHS
- dostupné množství:
- 14888 Pieces
- Datový list:
- SI1021R-T1-GE3.pdf
Úvod
BYCHIPS je distribuční odrůda pro SI1021R-T1-GE3, máme zásoby pro okamžitou přepravu a také k dispozici pro dlouhodobé zásobování. Zašlete nám svůj plán nákupu SI1021R-T1-GE3 e-mailem vám poskytneme nejlepší cenu podle svého plánu.
Specifikace
| Vgs (th) (max) 'Id: | 3V @ 250µA |
|---|---|
| Vgs (Max): | ±20V |
| Technika: | MOSFET (Metal Oxide) |
| Dodavatel zařízení Package: | SC-75A |
| Série: | TrenchFET® |
| RDS On (Max) @ Id, Vgs: | 4 Ohm @ 500mA, 10V |
| Ztráta energie (Max): | 250mW (Ta) |
| Obal: | Tape & Reel (TR) |
| Paket / krabice: | SC-75A |
| Ostatní jména: | SI1021R-T1-GE3TR SI1021RT1GE3 |
| Provozní teplota: | -55°C ~ 150°C (TJ) |
| Typ montáže: | Surface Mount |
| Úroveň citlivosti na vlhkost (MSL): | 1 (Unlimited) |
| Výrobní standardní doba výroby: | 15 Weeks |
| Výrobní číslo výrobce: | SI1021R-T1-GE3 |
| Vstupní kapacita (Ciss) (Max) @ Vds: | 23pF @ 25V |
| Nabíjení brány (Qg) (Max) @ Vgs: | 1.7nC @ 15V |
| Typ FET: | P-Channel |
| FET Feature: | - |
| Rozšířený popis: | P-Channel 60V 190mA (Ta) 250mW (Ta) Surface Mount SC-75A |
| Napětí měniče (max. Zap. RDS, min. Zap. Zap.): | 4.5V, 10V |
| Drain na zdroj napětí (Vdss): | 60V |
| Popis: | MOSFET P-CH 60V 190MA SC-75A |
| Proud - kontinuální odtok (Id) @ 25 ° C: | 190mA (Ta) |
| Email: | [email protected] |
Související díly pro SI1021R-T1-GE3
| Obraz | Part Number | Výrobci | Popis | Pohled |
|---|---|---|---|---|
 |
SI1025X-T1-E3 | Vishay Siliconix | MOSFET 2P-CH 60V 0.19A SOT563F | Dotaz |
|
SI1026X-T1-E3 | Vishay Siliconix | MOSFET 2N-CH 60V 0.305A SOT563F | Dotaz |
 |
IXFH40N85X | IXYS | MOSFET NCH 850V 40A TO247 | Dotaz |
|
SI1024X-T1-E3 | Vishay Siliconix | MOSFET 2N-CH 20V 0.485A SOT563F | Dotaz |
 |
SI1022R-T1-E3 | Vishay Siliconix | MOSFET N-CH 60V 330MA SC-75A | Dotaz |
|
SI1021R-T1-E3 | Vishay Siliconix | MOSFET P-CH 60V 190MA SC-75A | Dotaz |
|
SI1023CX-T1-GE3 | Vishay Siliconix | MOSFET 2P-CH 20V SC89-6 | Dotaz |
|
SI1023X-T1-E3 | Vishay Siliconix | MOSFET 2P-CH 20V 0.37A SOT563F | Dotaz |
|
SI1026X-T1-GE3 | Vishay Siliconix | MOSFET 2N-CH 60V 0.305A SC89-6 | Dotaz |
|
SI1029X-T1-E3 | Vishay Siliconix | MOSFET N/P-CH 60V SOT563F | Dotaz |
 |
RCX450N20 | Rohm Semiconductor | MOSFET N-CH 200V 45A TO220 | Dotaz |
|
SI1029X-T1-GE3 | Vishay Siliconix | MOSFET N/P-CH 60V SC89-6 | Dotaz |
|
SI1028X-T1-GE3 | Vishay Siliconix | MOSFET 2N-CH 30V SC89-6 | Dotaz |
|
SI1025X-T1-GE3 | Vishay Siliconix | MOSFET 2P-CH 60V 0.19A SC-89 | Dotaz |
|
SI1022R-T1-GE3 | Vishay Siliconix | MOSFET N-CH 60V 330MA SC-75A | Dotaz |
|
SI1024X-T1-GE3 | Vishay Siliconix | MOSFET 2N-CH 20V 0.485A SC89-6 | Dotaz |
 |
IXTQ36N30P | IXYS | MOSFET N-CH 300V 36A TO-3P | Dotaz |
|
SI1023X-T1-GE3 | Vishay Siliconix | MOSFET 2P-CH 20V 0.37A SC89-6 | Dotaz |
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