Koupit MTD5P06VT4GV s BYCHPS
Koupit se zárukou
MTD5P06VT4GV
- Part Number:
- MTD5P06VT4GV
- Popis:
- MOSFET P-CH 60V 5A DPAK
- Stav volného vedení / RoHS:
- Bez olova / V souladu RoHS
- dostupné množství:
- 16892 Pieces
- Datový list:
- MTD5P06VT4GV.pdf
Úvod
BYCHIPS je distribuční odrůda pro MTD5P06VT4GV, máme zásoby pro okamžitou přepravu a také k dispozici pro dlouhodobé zásobování. Zašlete nám svůj plán nákupu MTD5P06VT4GV e-mailem vám poskytneme nejlepší cenu podle svého plánu.
Specifikace
| Vgs (th) (max) 'Id: | 4V @ 250µA |
|---|---|
| Technika: | MOSFET (Metal Oxide) |
| Dodavatel zařízení Package: | DPAK-3 |
| Série: | - |
| RDS On (Max) @ Id, Vgs: | 450 mOhm @ 2.5A, 10V |
| Ztráta energie (Max): | 2.1W (Ta), 40W (Tc) |
| Obal: | Tape & Reel (TR) |
| Paket / krabice: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Provozní teplota: | -55°C ~ 175°C (TJ) |
| Typ montáže: | Surface Mount |
| Úroveň citlivosti na vlhkost (MSL): | 1 (Unlimited) |
| Výrobní číslo výrobce: | MTD5P06VT4GV |
| Vstupní kapacita (Ciss) (Max) @ Vds: | 510pF @ 25V |
| Nabíjení brány (Qg) (Max) @ Vgs: | 20nC @ 10V |
| Typ FET: | P-Channel |
| FET Feature: | - |
| Rozšířený popis: | P-Channel 60V 5A (Tc) 2.1W (Ta), 40W (Tc) Surface Mount DPAK-3 |
| Drain na zdroj napětí (Vdss): | 60V |
| Popis: | MOSFET P-CH 60V 5A DPAK |
| Proud - kontinuální odtok (Id) @ 25 ° C: | 5A (Tc) |
| Email: | [email protected] |
Související díly pro MTD5P06VT4GV
| Obraz | Part Number | Výrobci | Popis | Pohled |
|---|---|---|---|---|
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SPD04P10PGBTMA1 | Infineon Technologies | MOSFET P-CH 100V 4A TO252-3 | Dotaz |
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STD1NK60-1 | STMicroelectronics | MOSFET N-CH 600V 1A IPAK | Dotaz |
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MTD5P06VT4 | ON Semiconductor | MOSFET P-CH 60V 5A DPAK | Dotaz |
|
MTD5P06VT4G | ON Semiconductor | MOSFET P-CH 60V 5A DPAK | Dotaz |
 |
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IRF7342D2TRPBF | Infineon Technologies | MOSFET P-CH 55V 3.4A 8-SOIC | Dotaz |
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