Koupit JDP2S12CR(TE85L,Q s BYCHPS
Koupit se zárukou
JDP2S12CR(TE85L,Q
- Part Number:
- JDP2S12CR(TE85L,Q
- Výrobce:
- Toshiba Semiconductor
- Popis:
- DIODE PIN 180V 1A S-FLAT
- Stav volného vedení / RoHS:
- Bez olova / V souladu RoHS
- dostupné množství:
- 15136 Pieces
- Datový list:
- JDP2S12CR(TE85L,Q.pdf
Úvod
BYCHIPS je distribuční odrůda pro JDP2S12CR(TE85L,Q, máme zásoby pro okamžitou přepravu a také k dispozici pro dlouhodobé zásobování. Zašlete nám svůj plán nákupu JDP2S12CR(TE85L,Q e-mailem vám poskytneme nejlepší cenu podle svého plánu.
Specifikace
| Napětí - Peak Reverse (Max): | 180V |
|---|---|
| Dodavatel zařízení Package: | S-FLAT (1.6x3.5) |
| Série: | - |
| Odpor při IF, F: | 700 mOhm @ 10mA, 100MHz |
| Ztráta energie (Max): | - |
| Obal: | Original-Reel® |
| Paket / krabice: | SOD-123F |
| Ostatní jména: | JDP2S12CR(TE85LQ)DKR JDP2S12CR(TE85LQ)DKR-ND JDP2S12CR(TE85LQDKR JDP2S12CR(TE85LQMDKR JDP2S12CR(TE85LQMDKR-ND |
| Provozní teplota: | 175°C (TJ) |
| Úroveň citlivosti na vlhkost (MSL): | 1 (Unlimited) |
| Výrobní číslo výrobce: | JDP2S12CR(TE85L,Q |
| Rozšířený popis: | RF Diode PIN - Single 180V 1A S-FLAT (1.6x3.5) |
| Diode Type: | PIN - Single |
| Popis: | DIODE PIN 180V 1A S-FLAT |
| Proud - Max: | 1A |
| Kapacitní @ Vr, F: | 1.3pF @ 40V, 1MHz |
| Email: | [email protected] |
Související díly pro JDP2S12CR(TE85L,Q
| Obraz | Part Number | Výrobci | Popis | Pohled |
|---|---|---|---|---|
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JDP2S02AFS(TPL3) | Toshiba Semiconductor and Storage | DIODE PIN 30V 50MA FSC | Dotaz |
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JDP2S08SC(TPL3) | Toshiba Semiconductor and Storage | DIODE PIN 30V 50MA SC2 | Dotaz |
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BAT 15-099LRH E6327 | Infineon Technologies | DIODE SCHOTTKY 4V 110MA TSLP-4 | Dotaz |
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BA782S-E3-08 | Vishay Semiconductor Diodes Division | DIODE BAND SW 100MA SOD323 | Dotaz |
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JDP2S02ACT(TPL3) | Toshiba Semiconductor and Storage | DIODE PIN 30V 50MA CTS2 | Dotaz |
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BAR 50-02V E6327 | Infineon Technologies | DIODE RF SGL 50V 100MA SC-79 | Dotaz |
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RN739DT146 | Rohm Semiconductor | DIODE PIN HF SW 50V 50MA SOT-346 | Dotaz |
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