Koupit IXTQ36P15P s BYCHPS
Koupit se zárukou
IXTQ36P15P
- Part Number:
- IXTQ36P15P
- Výrobce:
- IXYS Corporation
- Popis:
- MOSFET P-CH 150V 36A TO-3P
- Stav volného vedení / RoHS:
- Bez olova / V souladu RoHS
- dostupné množství:
- 14401 Pieces
- Datový list:
- IXTQ36P15P.pdf
Úvod
BYCHIPS je distribuční odrůda pro IXTQ36P15P, máme zásoby pro okamžitou přepravu a také k dispozici pro dlouhodobé zásobování. Zašlete nám svůj plán nákupu IXTQ36P15P e-mailem vám poskytneme nejlepší cenu podle svého plánu.
Specifikace
| Vgs (th) (max) 'Id: | 4.5V @ 250µA |
|---|---|
| Vgs (Max): | ±20V |
| Technika: | MOSFET (Metal Oxide) |
| Dodavatel zařízení Package: | TO-3P |
| Série: | PolarP™ |
| RDS On (Max) @ Id, Vgs: | 110 mOhm @ 18A, 10V |
| Ztráta energie (Max): | 300W (Tc) |
| Obal: | Tube |
| Paket / krabice: | TO-3P-3, SC-65-3 |
| Provozní teplota: | -55°C ~ 150°C (TJ) |
| Typ montáže: | Through Hole |
| Úroveň citlivosti na vlhkost (MSL): | 1 (Unlimited) |
| Výrobní standardní doba výroby: | 8 Weeks |
| Výrobní číslo výrobce: | IXTQ36P15P |
| Vstupní kapacita (Ciss) (Max) @ Vds: | 3100pF @ 25V |
| Nabíjení brány (Qg) (Max) @ Vgs: | 55nC @ 10V |
| Typ FET: | P-Channel |
| FET Feature: | - |
| Rozšířený popis: | P-Channel 150V 36A (Tc) 300W (Tc) Through Hole TO-3P |
| Napětí měniče (max. Zap. RDS, min. Zap. Zap.): | 10V |
| Drain na zdroj napětí (Vdss): | 150V |
| Popis: | MOSFET P-CH 150V 36A TO-3P |
| Proud - kontinuální odtok (Id) @ 25 ° C: | 36A (Tc) |
| Email: | [email protected] |
Související díly pro IXTQ36P15P
| Obraz | Part Number | Výrobci | Popis | Pohled |
|---|---|---|---|---|
 |
IXTQ36N30P | IXYS | MOSFET N-CH 300V 36A TO-3P | Dotaz |
 |
DMN10H220LE-13 | Diodes Incorporated | MOSFET N-CH 100V 2.3A SOT223 | Dotaz |
|
IXTQ36N50P | IXYS | MOSFET N-CH 500V 36A TO-3P | Dotaz |
|
IXTQ36N20T | IXYS | MOSFET N-CH 200V TO-3P | Dotaz |
 |
AUIRLS4030 | Infineon Technologies | MOSFET N-CH 100V 180A D2PAK | Dotaz |
|
IXTQ30N50L2 | IXYS | MOSFET N-CH 500V 30A TO-3P | Dotaz |
|
IXTQ32N65X | IXYS | MOSFET N-CH 650V 32A TO-3P | Dotaz |
 |
NTS4101PT1G | ON Semiconductor | MOSFET P-CH 20V 1.37A SOT-323 | Dotaz |
|
IXTQ30N60L2 | IXYS | MOSFET N-CH 600V 30A TO-3P | Dotaz |
|
IXTQ30N50P | IXYS | MOSFET N-CH 500V 30A TO-3P | Dotaz |
|
IXTQ30N60P | IXYS | MOSFET N-CH 600V 30A TO-3P | Dotaz |
 |
FQP17P10 | Fairchild/ON Semiconductor | MOSFET P-CH 100V 16.5A TO-220 | Dotaz |
 |
IXFX24N90Q | IXYS | MOSFET N-CH 900V 24A PLUS 247 | Dotaz |
 |
PSMN8R5-100ESQ | Nexperia USA Inc. | MOSFET N-CH 100V 100A I2PAK | Dotaz |
 |
GP1M004A090FH | Global Power Technologies Group | MOSFET N-CH 900V 4A TO220F | Dotaz |
|
IXTQ30N50L | IXYS | MOSFET N-CH 500V 30A TO-3P | Dotaz |
 |
IPP110N20NA | Infineon Technologies | MOSFET N-CH 200V 88A TO220-3 | Dotaz |
Latest News
- Xilinx Ships Industry's First 16nm All Programmable MPSoC Ahead of Schedule
- Xilinx and Samsung Jointly Enable the World's First 5G NR Commercial Deployment
- TI to reduce costs in Wireless business; OMAP™ processors and wireless connectivity solutions will focus on embedded markets
- TI's Peter Balyta to head Education Technology division; Melendy Lovett to retire
- Janet Clark to join TI board of directors
- TI unveils DLP® 0.66-inch 4K ultra-high definition (UHD) chip, enabling more affordable large screen projection displays for home, business and education
- GCHQ Director calls for international cyber pact
- Embedded World: Arm introduces fourth security element to PSA
- Last chance: Nominate BrightSparks before 28 February
- Embedded World 2019: Get the full Electronics Weekly Guide
- "Xcell Journal" Special Edition: Xilinx Customers Shape a Brilliant Future
- Xilinx Launches Public Access of the SDSoC Development Environment to Expand Zynq SoC User Base to Broad Community of Systems and Software Engineers