Koupit IXFN66N85X s BYCHPS
Koupit se zárukou
IXFN66N85X
- Part Number:
- IXFN66N85X
- Výrobce:
- IXYS Corporation
- Popis:
- 850V/65A ULTRA JUNCTION X-CLASS
- Stav volného vedení / RoHS:
- Bez olova / V souladu RoHS
- dostupné množství:
- 13109 Pieces
- Datový list:
- IXFN66N85X.pdf
Úvod
BYCHIPS je distribuční odrůda pro IXFN66N85X, máme zásoby pro okamžitou přepravu a také k dispozici pro dlouhodobé zásobování. Zašlete nám svůj plán nákupu IXFN66N85X e-mailem vám poskytneme nejlepší cenu podle svého plánu.
Specifikace
| Vgs (th) (max) 'Id: | 5.5V @ 8mA |
|---|---|
| Vgs (Max): | ±30V |
| Technika: | MOSFET (Metal Oxide) |
| Dodavatel zařízení Package: | SOT-227 |
| Série: | HiPerFET™ |
| RDS On (Max) @ Id, Vgs: | 65 mOhm @ 33A, 10V |
| Ztráta energie (Max): | 830W (Tc) |
| Obal: | Tube |
| Paket / krabice: | SOT-227-4, miniBLOC |
| Provozní teplota: | -55°C ~ 150°C (TJ) |
| Typ montáže: | Chassis Mount |
| Úroveň citlivosti na vlhkost (MSL): | 1 (Unlimited) |
| Výrobní standardní doba výroby: | 8 Weeks |
| Výrobní číslo výrobce: | IXFN66N85X |
| Vstupní kapacita (Ciss) (Max) @ Vds: | 8900pF @ 25V |
| Nabíjení brány (Qg) (Max) @ Vgs: | 230nC @ 10V |
| Typ FET: | N-Channel |
| FET Feature: | - |
| Rozšířený popis: | N-Channel 850V 65A (Tc) 830W (Tc) Chassis Mount SOT-227 |
| Napětí měniče (max. Zap. RDS, min. Zap. Zap.): | 10V |
| Drain na zdroj napětí (Vdss): | 850V |
| Popis: | 850V/65A ULTRA JUNCTION X-CLASS |
| Proud - kontinuální odtok (Id) @ 25 ° C: | 65A (Tc) |
| Email: | [email protected] |
Související díly pro IXFN66N85X
| Obraz | Part Number | Výrobci | Popis | Pohled |
|---|---|---|---|---|
 |
IXFN64N60P | IXYS | MOSFET N-CH 600V 50A SOT-227 | Dotaz |
|
IXFN64N50PD3 | IXYS | MOSFET N-CH 500V 52A SOT-227B | Dotaz |
 |
CSD16322Q5 | Texas Instruments | MOSFET N-CH 25V 5X6 8SON | Dotaz |
 |
IRLL3303TRPBF | Infineon Technologies | MOSFET N-CH 30V 4.6A SOT223 | Dotaz |
 |
RQ1A060ZPTR | Rohm Semiconductor | MOSFET P-CH 12V 6A TSMT8 | Dotaz |
 |
APT41M80B2 | Microsemi Corporation | MOSFET N-CH 800V 43A T-MAX | Dotaz |
 |
IRC830PBF | Vishay Siliconix | MOSFET N-CH 500V 4.5A TO-220-5 | Dotaz |
 |
IPB13N03LB | Infineon Technologies | MOSFET N-CH 30V 30A D2PAK | Dotaz |
|
IPB65R310CFDAATMA1 | Infineon Technologies | MOSFET N-CH TO263-3 | Dotaz |
|
IXFN62N80Q3 | IXYS | MOSFET N-CH 800V 49A SOT-227 | Dotaz |
|
IXFN60N80P | IXYS | MOSFET N-CH 800V 53A SOT-227B | Dotaz |
|
IXFN64N50P | IXYS | MOSFET N-CH 500V 61A SOT-227 | Dotaz |
 |
IPD12CN10NGBUMA1 | Infineon Technologies | MOSFET N-CH 100V 67A TO252-3 | Dotaz |
|
IXFN66N50Q2 | IXYS | MOSFET N-CH 500V 66A SOT-227B | Dotaz |
 |
FCP16N60 | Fairchild/ON Semiconductor | MOSFET N-CH 600V 16A TO-220 | Dotaz |
 |
SSM3J120TU,LF | Toshiba Semiconductor and Storage | MOSFET P-CH 20V 4A UFM | Dotaz |
|
IRF3704ZCS | Infineon Technologies | MOSFET N-CH 20V 67A D2PAK | Dotaz |
|
IXFN60N60 | IXYS | MOSFET N-CH 600V 60A SOT-227B | Dotaz |
|
IXFN64N50PD2 | IXYS | MOSFET N-CH 500V 52A SOT-227B | Dotaz |
Latest News
- Xilinx Ships Industry's First 16nm All Programmable MPSoC Ahead of Schedule
- Xilinx and Samsung Jointly Enable the World's First 5G NR Commercial Deployment
- TI to reduce costs in Wireless business; OMAP™ processors and wireless connectivity solutions will focus on embedded markets
- TI's Peter Balyta to head Education Technology division; Melendy Lovett to retire
- Janet Clark to join TI board of directors
- TI unveils DLP® 0.66-inch 4K ultra-high definition (UHD) chip, enabling more affordable large screen projection displays for home, business and education
- GCHQ Director calls for international cyber pact
- Embedded World: Arm introduces fourth security element to PSA
- Last chance: Nominate BrightSparks before 28 February
- Embedded World 2019: Get the full Electronics Weekly Guide
- "Xcell Journal" Special Edition: Xilinx Customers Shape a Brilliant Future
- Xilinx Launches Public Access of the SDSoC Development Environment to Expand Zynq SoC User Base to Broad Community of Systems and Software Engineers