Koupit IXFH14N80P s BYCHPS
Koupit se zárukou
IXFH14N80P
- Part Number:
- IXFH14N80P
- Výrobce:
- IXYS Corporation
- Popis:
- MOSFET N-CH 800V 14A TO-247
- Stav volného vedení / RoHS:
- Bez olova / V souladu RoHS
- dostupné množství:
- 12254 Pieces
- Datový list:
- IXFH14N80P.pdf
Úvod
BYCHIPS je distribuční odrůda pro IXFH14N80P, máme zásoby pro okamžitou přepravu a také k dispozici pro dlouhodobé zásobování. Zašlete nám svůj plán nákupu IXFH14N80P e-mailem vám poskytneme nejlepší cenu podle svého plánu.
Specifikace
| Vgs (th) (max) 'Id: | 5.5V @ 4mA |
|---|---|
| Technika: | MOSFET (Metal Oxide) |
| Dodavatel zařízení Package: | TO-247AD (IXFH) |
| Série: | HiPerFET™, PolarHT™ |
| RDS On (Max) @ Id, Vgs: | 720 mOhm @ 500mA, 10V |
| Ztráta energie (Max): | 400W (Tc) |
| Obal: | Tube |
| Paket / krabice: | TO-247-3 |
| Provozní teplota: | -55°C ~ 150°C (TJ) |
| Typ montáže: | Through Hole |
| Úroveň citlivosti na vlhkost (MSL): | 1 (Unlimited) |
| Výrobní standardní doba výroby: | 8 Weeks |
| Výrobní číslo výrobce: | IXFH14N80P |
| Vstupní kapacita (Ciss) (Max) @ Vds: | 3900pF @ 25V |
| Nabíjení brány (Qg) (Max) @ Vgs: | 61nC @ 10V |
| Typ FET: | N-Channel |
| FET Feature: | - |
| Rozšířený popis: | N-Channel 800V 14A (Tc) 400W (Tc) Through Hole TO-247AD (IXFH) |
| Drain na zdroj napětí (Vdss): | 800V |
| Popis: | MOSFET N-CH 800V 14A TO-247 |
| Proud - kontinuální odtok (Id) @ 25 ° C: | 14A (Tc) |
| Email: | [email protected] |
Související díly pro IXFH14N80P
| Obraz | Part Number | Výrobci | Popis | Pohled |
|---|---|---|---|---|
 |
IXFH150N15P | IXYS | MOSFET N-CH 150V 150A TO-247 | Dotaz |
|
IXFH14N60P | IXYS | MOSFET N-CH 600V 14A TO-247 | Dotaz |
|
IXFH12N120P | IXYS | MOSFET N-CH 1200V 12A TO-247 | Dotaz |
|
IXFH14N100Q2 | IXYS | MOSFET N-CH 1000V 14A TO-247AD | Dotaz |
 |
IXFH14N85X | IXYS | MOSFET N-CH 850V 14A TO247-3 | Dotaz |
|
IXFH14N80 | IXYS | MOSFET N-CH 800V 14A TO-247 | Dotaz |
|
IXFH16N50P | IXYS | MOSFET N-CH 500V 16A TO-247 | Dotaz |
|
IXFH15N100 | IXYS | MOSFET N-CH 1000V 15A TO-247 | Dotaz |
|
IXFH10N80P | IXYS | MOSFET N-CH 800V 10A TO-247 | Dotaz |
|
IXFH14N100 | IXYS | MOSFET N-CH 1000V 14A TO-247 | Dotaz |
|
IXFH160N15T | IXYS | MOSFET N-CH 150V 160A TO-247 | Dotaz |
|
IXFH140N10P | IXYS | MOSFET N-CH 100V 140A TO-247 | Dotaz |
|
IXFH102N15T | IXYS | MOSFET N-CH 150V 102A TO-247 | Dotaz |
|
IXFH12N100 | IXYS | MOSFET N-CH 1KV 12A TO-247AD | Dotaz |
|
IXFH170N10P | IXYS | MOSFET N-CH 100V 170A TO-247 | Dotaz |
|
IXFH14N60P3 | IXYS | MOSFET N-CH 600V 14A TO-247 | Dotaz |
Latest News
- Xilinx Ships Industry's First 16nm All Programmable MPSoC Ahead of Schedule
- Xilinx and Samsung Jointly Enable the World's First 5G NR Commercial Deployment
- TI to reduce costs in Wireless business; OMAP™ processors and wireless connectivity solutions will focus on embedded markets
- TI's Peter Balyta to head Education Technology division; Melendy Lovett to retire
- Janet Clark to join TI board of directors
- TI unveils DLP® 0.66-inch 4K ultra-high definition (UHD) chip, enabling more affordable large screen projection displays for home, business and education
- GCHQ Director calls for international cyber pact
- Embedded World: Arm introduces fourth security element to PSA
- Last chance: Nominate BrightSparks before 28 February
- Embedded World 2019: Get the full Electronics Weekly Guide
- "Xcell Journal" Special Edition: Xilinx Customers Shape a Brilliant Future
- Xilinx Launches Public Access of the SDSoC Development Environment to Expand Zynq SoC User Base to Broad Community of Systems and Software Engineers