Koupit IXFA180N10T2 s BYCHPS
Koupit se zárukou
IXFA180N10T2
- Part Number:
- IXFA180N10T2
- Výrobce:
- IXYS Corporation
- Popis:
- MOSFET N-CH 100V 180A TO-263AA
- Stav volného vedení / RoHS:
- Bez olova / V souladu RoHS
- dostupné množství:
- 13030 Pieces
- Datový list:
- IXFA180N10T2.pdf
Úvod
BYCHIPS je distribuční odrůda pro IXFA180N10T2, máme zásoby pro okamžitou přepravu a také k dispozici pro dlouhodobé zásobování. Zašlete nám svůj plán nákupu IXFA180N10T2 e-mailem vám poskytneme nejlepší cenu podle svého plánu.
Specifikace
| Vgs (th) (max) 'Id: | 4V @ 250µA |
|---|---|
| Technika: | MOSFET (Metal Oxide) |
| Dodavatel zařízení Package: | TO-263 (IXFA) |
| Série: | GigaMOS™, HiPerFET™, TrenchT2™ |
| RDS On (Max) @ Id, Vgs: | 6 mOhm @ 50A, 10V |
| Ztráta energie (Max): | 480W (Tc) |
| Obal: | Tube |
| Paket / krabice: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Provozní teplota: | -55°C ~ 175°C (TJ) |
| Typ montáže: | Surface Mount |
| Úroveň citlivosti na vlhkost (MSL): | 1 (Unlimited) |
| Výrobní standardní doba výroby: | 8 Weeks |
| Výrobní číslo výrobce: | IXFA180N10T2 |
| Vstupní kapacita (Ciss) (Max) @ Vds: | 10500pF @ 25V |
| Nabíjení brány (Qg) (Max) @ Vgs: | 185nC @ 10V |
| Typ FET: | N-Channel |
| FET Feature: | - |
| Rozšířený popis: | N-Channel 100V 180A (Tc) 480W (Tc) Surface Mount TO-263 (IXFA) |
| Drain na zdroj napětí (Vdss): | 100V |
| Popis: | MOSFET N-CH 100V 180A TO-263AA |
| Proud - kontinuální odtok (Id) @ 25 ° C: | 180A (Tc) |
| Email: | [email protected] |
Související díly pro IXFA180N10T2
| Obraz | Part Number | Výrobci | Popis | Pohled |
|---|---|---|---|---|
 |
AUXTLR3110Z | Infineon Technologies | MOSFET N-CH 100V DPAK | Dotaz |
 |
IXFA16N50P | IXYS | MOSFET N-CH 500V 16A D2-PAK | Dotaz |
|
IXFA10N60P | IXYS | MOSFET N-CH 600V 10A D2-PAK | Dotaz |
 |
RE1E002SPTCL | Rohm Semiconductor | MOSFET P-CH 30V 0.25A EMT3 | Dotaz |
|
IXFA130N10T2 | IXYS | MOSFET N-CH 100V 130A TO-263AA | Dotaz |
|
IXFA130N10T | IXYS | MOSFET N-CH 100V 130A D2PAK | Dotaz |
|
IXFA14N60P3 | IXYS | MOSFET N-CH 600V 14A TO-263AA | Dotaz |
|
IXFA10N80P | IXYS | MOSFET N-CH 800V 10A TO-263 | Dotaz |
 |
IRL3502 | Infineon Technologies | MOSFET N-CH 20V 110A TO-220AB | Dotaz |
|
IXFA14N85XHV | IXYS | MOSFET N-CH 850V 14A TO263-3 | Dotaz |
 |
IPP65R190E6XKSA1 | Infineon Technologies | MOSFET N-CH 650V 20.2A TO220 | Dotaz |
|
IXFA18N60X | IXYS | MOSFET N-CH 600V 18A TO-263AA | Dotaz |
|
IXFA12N50P | IXYS | MOSFET N-CH 500V 12A D2-PAK | Dotaz |
|
IXFA16N60P3 | IXYS | MOSFET N-CH 600V 16A TO-263AA | Dotaz |
|
IXFA110N15T2 | IXYS | MOSFET N-CH 150V 110A D2PAK | Dotaz |
|
IXFA102N15T | IXYS | MOSFET N-CH 150V 102A D2PAK | Dotaz |
|
IXFA14N60P | IXYS | MOSFET N-CH 600V 14A D2-PAK | Dotaz |
|
IXFA16N50P3 | IXYS | MOSFET N-CH 500V 16A TO-263AA | Dotaz |
|
IRLMS1902TRPBF | Infineon Technologies | MOSFET N-CH 20V 3.2A 6-TSOP | Dotaz |
Latest News
- Xilinx Ships Industry's First 16nm All Programmable MPSoC Ahead of Schedule
- Xilinx and Samsung Jointly Enable the World's First 5G NR Commercial Deployment
- TI to reduce costs in Wireless business; OMAP™ processors and wireless connectivity solutions will focus on embedded markets
- TI's Peter Balyta to head Education Technology division; Melendy Lovett to retire
- Janet Clark to join TI board of directors
- TI unveils DLP® 0.66-inch 4K ultra-high definition (UHD) chip, enabling more affordable large screen projection displays for home, business and education
- GCHQ Director calls for international cyber pact
- Embedded World: Arm introduces fourth security element to PSA
- Last chance: Nominate BrightSparks before 28 February
- Embedded World 2019: Get the full Electronics Weekly Guide
- "Xcell Journal" Special Edition: Xilinx Customers Shape a Brilliant Future
- Xilinx Launches Public Access of the SDSoC Development Environment to Expand Zynq SoC User Base to Broad Community of Systems and Software Engineers