Koupit IRF8302MTR1PBF s BYCHPS
Koupit se zárukou
IRF8302MTR1PBF
- Part Number:
- IRF8302MTR1PBF
- Popis:
- MOSFET N CH 30V 31A MX
- Stav volného vedení / RoHS:
- Bez olova / V souladu RoHS
- dostupné množství:
- 13070 Pieces
- Datový list:
- IRF8302MTR1PBF.pdf
Úvod
BYCHIPS je distribuční odrůda pro IRF8302MTR1PBF, máme zásoby pro okamžitou přepravu a také k dispozici pro dlouhodobé zásobování. Zašlete nám svůj plán nákupu IRF8302MTR1PBF e-mailem vám poskytneme nejlepší cenu podle svého plánu.
Specifikace
| Vgs (th) (max) 'Id: | 2.35V @ 150µA |
|---|---|
| Technika: | MOSFET (Metal Oxide) |
| Dodavatel zařízení Package: | DIRECTFET™ MX |
| Série: | HEXFET® |
| RDS On (Max) @ Id, Vgs: | 1.8 mOhm @ 31A, 10V |
| Ztráta energie (Max): | 2.8W (Ta), 104W (Tc) |
| Obal: | Tape & Reel (TR) |
| Paket / krabice: | DirectFET™ Isometric MX |
| Ostatní jména: | IRF8302MTR1PBF-ND SP001566576 |
| Provozní teplota: | -40°C ~ 150°C (TJ) |
| Typ montáže: | Surface Mount |
| Úroveň citlivosti na vlhkost (MSL): | 1 (Unlimited) |
| Výrobní číslo výrobce: | IRF8302MTR1PBF |
| Vstupní kapacita (Ciss) (Max) @ Vds: | 6030pF @ 15V |
| Nabíjení brány (Qg) (Max) @ Vgs: | 53nC @ 4.5V |
| Typ FET: | N-Channel |
| FET Feature: | - |
| Rozšířený popis: | N-Channel 30V 31A (Ta), 190A (Tc) 2.8W (Ta), 104W (Tc) Surface Mount DIRECTFET™ MX |
| Drain na zdroj napětí (Vdss): | 30V |
| Popis: | MOSFET N CH 30V 31A MX |
| Proud - kontinuální odtok (Id) @ 25 ° C: | 31A (Ta), 190A (Tc) |
| Email: | [email protected] |
Související díly pro IRF8302MTR1PBF
| Obraz | Part Number | Výrobci | Popis | Pohled |
|---|---|---|---|---|
 |
IRF8306MTRPBF | Infineon Technologies | MOSFET N-CH 30V 23A DIRECTFET | Dotaz |
 |
IRF8301MTRPBF | Infineon Technologies | MOSFET N-CH 30V 27A DIRECTFET MT | Dotaz |
|
IRF8306MTR1PBF | Infineon Technologies | MOSFET N-CH 30V 23A DIRECTFET | Dotaz |
|
IRF8302MTRPBF | Infineon Technologies | MOSFET N-CH 30V 31A MX | Dotaz |
|
IRF8308MTRPBF | Infineon Technologies | MOSFET N-CH 30V 27A MX | Dotaz |
|
IRF8308MTR1PBF | Infineon Technologies | MOSFET N-CH 30V 27A MX | Dotaz |
|
IRF8304MTRPBF | Infineon Technologies | MOSFET N-CH 30V 28A MX | Dotaz |
|
IRF8304MTR1PBF | Infineon Technologies | MOSFET N-CH 30V 28A MX | Dotaz |
 |
IRF8327STRPBF | Infineon Technologies | MOSFET N-CH 30V 14A SQ | Dotaz |
 |
IRF8313TRPBF | Infineon Technologies | MOSFET 2N-CH 30V 9.7A 8-SOIC | Dotaz |
 |
IRF8327STR1PBF | Infineon Technologies | MOSFET N-CH 30V 14A SQ | Dotaz |
Latest News
- Xilinx Ships Industry's First 16nm All Programmable MPSoC Ahead of Schedule
- Xilinx and Samsung Jointly Enable the World's First 5G NR Commercial Deployment
- TI to reduce costs in Wireless business; OMAP™ processors and wireless connectivity solutions will focus on embedded markets
- TI's Peter Balyta to head Education Technology division; Melendy Lovett to retire
- Janet Clark to join TI board of directors
- TI unveils DLP® 0.66-inch 4K ultra-high definition (UHD) chip, enabling more affordable large screen projection displays for home, business and education
- GCHQ Director calls for international cyber pact
- Embedded World: Arm introduces fourth security element to PSA
- Last chance: Nominate BrightSparks before 28 February
- Embedded World 2019: Get the full Electronics Weekly Guide
- "Xcell Journal" Special Edition: Xilinx Customers Shape a Brilliant Future
- Xilinx Launches Public Access of the SDSoC Development Environment to Expand Zynq SoC User Base to Broad Community of Systems and Software Engineers