Koupit IRF1902GTRPBF s BYCHPS
Koupit se zárukou
IRF1902GTRPBF
- Part Number:
- IRF1902GTRPBF
- Popis:
- MOSFET N-CH 20V 4.2A 8SOIC
- Stav volného vedení / RoHS:
- Bez olova / V souladu RoHS
- dostupné množství:
- 16898 Pieces
- Datový list:
- IRF1902GTRPBF.pdf
Úvod
BYCHIPS je distribuční odrůda pro IRF1902GTRPBF, máme zásoby pro okamžitou přepravu a také k dispozici pro dlouhodobé zásobování. Zašlete nám svůj plán nákupu IRF1902GTRPBF e-mailem vám poskytneme nejlepší cenu podle svého plánu.
Specifikace
| Vgs (th) (max) 'Id: | 700mV @ 250µA |
|---|---|
| Technika: | MOSFET (Metal Oxide) |
| Dodavatel zařízení Package: | 8-SO |
| Série: | HEXFET® |
| RDS On (Max) @ Id, Vgs: | 85 mOhm @ 4A, 4.5V |
| Ztráta energie (Max): | - |
| Obal: | Tape & Reel (TR) |
| Paket / krabice: | 8-SOIC (0.154", 3.90mm Width) |
| Ostatní jména: | SP001561612 |
| Provozní teplota: | -55°C ~ 150°C (TJ) |
| Typ montáže: | Surface Mount |
| Úroveň citlivosti na vlhkost (MSL): | 1 (Unlimited) |
| Výrobní číslo výrobce: | IRF1902GTRPBF |
| Vstupní kapacita (Ciss) (Max) @ Vds: | 310pF @ 15V |
| Nabíjení brány (Qg) (Max) @ Vgs: | 7.5nC @ 4.5V |
| Typ FET: | N-Channel |
| FET Feature: | - |
| Rozšířený popis: | N-Channel 20V 4.2A (Ta) Surface Mount 8-SO |
| Drain na zdroj napětí (Vdss): | 20V |
| Popis: | MOSFET N-CH 20V 4.2A 8SOIC |
| Proud - kontinuální odtok (Id) @ 25 ° C: | 4.2A (Ta) |
| Email: | [email protected] |
Související díly pro IRF1902GTRPBF
| Obraz | Part Number | Výrobci | Popis | Pohled |
|---|---|---|---|---|
 |
SPD09P06PL | Infineon Technologies | MOSFET P-CH 60V 9.7A DPAK | Dotaz |
 |
IRF1902GPBF | Infineon Technologies | MOSFET N-CH 20V 4.2A 8SOIC | Dotaz |
 |
IPB45N06S3-16 | Infineon Technologies | MOSFET N-CH 55V 45A TO-263 | Dotaz |
 |
IXFX20N120P | IXYS | MOSFET N-CH 1200V 20A PLUS247 | Dotaz |
 |
TK14E65W5,S1X | Toshiba Semiconductor and Storage | MOSFET N-CH 650V 13.7A TO-220AB | Dotaz |
|
STB21NM60ND | STMicroelectronics | MOSFET N-CH 600V 17A D2PAK | Dotaz |
 |
STP80NF55-06FP | STMicroelectronics | MOSFET N-CH 55V 60A TO-220FP | Dotaz |
|
IRF1902PBF | Infineon Technologies | MOSFET N-CH 20V 4.2A 8-SOIC | Dotaz |
 |
NTMFS4841NHT1G | ON Semiconductor | MOSFET N-CH 30V 8.6A SO-8FL | Dotaz |
 |
IRFP260 | IXYS | MOSFET N-CH 200V 46A TO247 | Dotaz |
|
IRF1902TRPBF | Infineon Technologies | MOSFET N-CH 20V 4.2A 8-SOIC | Dotaz |
|
NTMFS4941NT3G | ON Semiconductor | MOSFET N-CH 30V 9A SO8FL | Dotaz |
|
IPD65R600C6BTMA1 | Infineon Technologies | MOSFET N-CH 650V 7.3A TO252 | Dotaz |
 |
SIHU3N50D-GE3 | Vishay Siliconix | MOSFET N-CH 500V 3A TO251 IPAK | Dotaz |
Latest News
- Xilinx Ships Industry's First 16nm All Programmable MPSoC Ahead of Schedule
- Xilinx and Samsung Jointly Enable the World's First 5G NR Commercial Deployment
- TI to reduce costs in Wireless business; OMAP™ processors and wireless connectivity solutions will focus on embedded markets
- TI's Peter Balyta to head Education Technology division; Melendy Lovett to retire
- Janet Clark to join TI board of directors
- TI unveils DLP® 0.66-inch 4K ultra-high definition (UHD) chip, enabling more affordable large screen projection displays for home, business and education
- GCHQ Director calls for international cyber pact
- Embedded World: Arm introduces fourth security element to PSA
- Last chance: Nominate BrightSparks before 28 February
- Embedded World 2019: Get the full Electronics Weekly Guide
- "Xcell Journal" Special Edition: Xilinx Customers Shape a Brilliant Future
- Xilinx Launches Public Access of the SDSoC Development Environment to Expand Zynq SoC User Base to Broad Community of Systems and Software Engineers