Koupit IPI037N08N3GXKSA1 s BYCHPS
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IPI037N08N3GXKSA1
- Part Number:
- IPI037N08N3GXKSA1
- Popis:
- MOSFET N-CH 80V 100A
- Stav volného vedení / RoHS:
- Bez olova / V souladu RoHS
- dostupné množství:
- 14278 Pieces
- Datový list:
- IPI037N08N3GXKSA1.pdf
Úvod
BYCHIPS je distribuční odrůda pro IPI037N08N3GXKSA1, máme zásoby pro okamžitou přepravu a také k dispozici pro dlouhodobé zásobování. Zašlete nám svůj plán nákupu IPI037N08N3GXKSA1 e-mailem vám poskytneme nejlepší cenu podle svého plánu.
Specifikace
| Vgs (th) (max) 'Id: | 3.5V @ 155µA |
|---|---|
| Technika: | MOSFET (Metal Oxide) |
| Dodavatel zařízení Package: | PG-TO262-3 |
| Série: | OptiMOS™ |
| RDS On (Max) @ Id, Vgs: | 3.75 mOhm @ 100A, 10V |
| Ztráta energie (Max): | 214W (Tc) |
| Obal: | Tube |
| Paket / krabice: | TO-262-3 Long Leads, I²Pak, TO-262AA |
| Ostatní jména: | SP000680654 |
| Provozní teplota: | -55°C ~ 175°C (TJ) |
| Typ montáže: | Through Hole |
| Úroveň citlivosti na vlhkost (MSL): | 1 (Unlimited) |
| Výrobní standardní doba výroby: | 14 Weeks |
| Výrobní číslo výrobce: | IPI037N08N3GXKSA1 |
| Vstupní kapacita (Ciss) (Max) @ Vds: | 8110pF @ 40V |
| Nabíjení brány (Qg) (Max) @ Vgs: | 117nC @ 10V |
| Typ FET: | N-Channel |
| FET Feature: | - |
| Rozšířený popis: | N-Channel 80V 100A (Tc) 214W (Tc) Through Hole PG-TO262-3 |
| Drain na zdroj napětí (Vdss): | 80V |
| Popis: | MOSFET N-CH 80V 100A |
| Proud - kontinuální odtok (Id) @ 25 ° C: | 100A (Tc) |
| Email: | [email protected] |
Související díly pro IPI037N08N3GXKSA1
| Obraz | Part Number | Výrobci | Popis | Pohled |
|---|---|---|---|---|
 |
IPI030N10N3GHKSA1 | Infineon Technologies | MOSFET N-CH 100V 100A TO262-3 | Dotaz |
|
IPI037N08N3GHKSA1 | Infineon Technologies | MOSFET N-CH 80V 100A TO262-3 | Dotaz |
 |
BSS84WQ-7-F | Diodes Incorporated | MOSFET P-CH 50V 130MA SOT323 | Dotaz |
|
IPI037N06L3GHKSA1 | Infineon Technologies | MOSFET N-CH 60V 90A TO262-3 | Dotaz |
 |
DMT10H015LCG-13 | Diodes Incorporated | MOSFET NCH 100V 9.4A 8VDFN | Dotaz |
|
IPI034NE7N3 G | Infineon Technologies | MOSFET N-CH 75V 100A TO262-3 | Dotaz |
 |
SI8824EDB-T2-E1 | Vishay Siliconix | MOSFET N-CH 20V 2.1A MICROFOOT | Dotaz |
 |
IXFT24N50Q | IXYS | MOSFET N-CH 500V 24A TO-268 | Dotaz |
|
IPI030N10N3GXKSA1 | Infineon Technologies | MOSFET N-CH 100V 100A | Dotaz |
|
IPI032N06N3 G | Infineon Technologies | MOSFET N-CH 60V 120A TO262-3 | Dotaz |
 |
VN2460N8-G | Microchip Technology | MOSFET N-CH 600V 0.2A SOT89-3 | Dotaz |
|
IPI032N06N3GAKSA1 | Infineon Technologies | MOSFET N-CH 60V 120A | Dotaz |
 |
NTLJS3180PZTBG | ON Semiconductor | MOSFET P-CH 20V 3.5A 6-WDFN | Dotaz |
|
IPI03N03LA | Infineon Technologies | MOSFET N-CH 25V 80A I2PAK | Dotaz |
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