Koupit IPB180N03S4LH0ATMA1 s BYCHPS
Koupit se zárukou
IPB180N03S4LH0ATMA1
- Part Number:
- IPB180N03S4LH0ATMA1
- Popis:
- MOSFET N-CH 30V 180A TO263-7-3
- Stav volného vedení / RoHS:
- Bez olova / V souladu RoHS
- dostupné množství:
- 14723 Pieces
- Datový list:
- IPB180N03S4LH0ATMA1.pdf
Úvod
BYCHIPS je distribuční odrůda pro IPB180N03S4LH0ATMA1, máme zásoby pro okamžitou přepravu a také k dispozici pro dlouhodobé zásobování. Zašlete nám svůj plán nákupu IPB180N03S4LH0ATMA1 e-mailem vám poskytneme nejlepší cenu podle svého plánu.
Specifikace
| Vgs (th) (max) 'Id: | 2.2V @ 200µA |
|---|---|
| Technika: | MOSFET (Metal Oxide) |
| Dodavatel zařízení Package: | PG-TO263-7-3 |
| Série: | OptiMOS™ |
| RDS On (Max) @ Id, Vgs: | 0.95 mOhm @ 100A, 10V |
| Ztráta energie (Max): | 250W (Tc) |
| Obal: | Tape & Reel (TR) |
| Paket / krabice: | TO-263-7, D²Pak (6 Leads + Tab), TO-263CB |
| Ostatní jména: | IPB180N03S4L-H0 IPB180N03S4L-H0-ND SP000555050 |
| Provozní teplota: | -55°C ~ 175°C (TJ) |
| Typ montáže: | Surface Mount |
| Úroveň citlivosti na vlhkost (MSL): | 1 (Unlimited) |
| Výrobní standardní doba výroby: | 14 Weeks |
| Výrobní číslo výrobce: | IPB180N03S4LH0ATMA1 |
| Vstupní kapacita (Ciss) (Max) @ Vds: | 23000pF @ 25V |
| Nabíjení brány (Qg) (Max) @ Vgs: | 300nC @ 10V |
| Typ FET: | N-Channel |
| FET Feature: | - |
| Rozšířený popis: | N-Channel 30V 180A (Tc) 250W (Tc) Surface Mount PG-TO263-7-3 |
| Drain na zdroj napětí (Vdss): | 30V |
| Popis: | MOSFET N-CH 30V 180A TO263-7-3 |
| Proud - kontinuální odtok (Id) @ 25 ° C: | 180A (Tc) |
| Email: | [email protected] |
Související díly pro IPB180N03S4LH0ATMA1
| Obraz | Part Number | Výrobci | Popis | Pohled |
|---|---|---|---|---|
 |
IPB180N04S4L01ATMA1 | Infineon Technologies | MOSFET N-CH TO263-7 | Dotaz |
|
IPB180N03S4L01ATMA1 | Infineon Technologies | MOSFET N-CH 30V 180A TO263-7-3 | Dotaz |
|
IPB180P04P4L02ATMA1 | Infineon Technologies | MOSFET P-CH 40V 180A TO263-7 | Dotaz |
|
IPB180N08S402ATMA1 | Infineon Technologies | MOSFET N-CH TO263-7 | Dotaz |
|
IPB180N06S4H1ATMA1 | Infineon Technologies | MOSFET N-CH 60V 180A TO263-7 | Dotaz |
|
IPB180N04S302ATMA1 | Infineon Technologies | MOSFET N-CH 40V 180A TO263-7 | Dotaz |
|
IPB180N04S3-02 | Infineon Technologies | MOSFET N-CH 40V 180A TO263-7 | Dotaz |
|
IPB180N06S4H1ATMA2 | Infineon Technologies | MOSFET N-CH 60V 180A TO263-7 | Dotaz |
|
IPB180N04S401ATMA1 | Infineon Technologies | MOSFET N-CH 40V 180A TO263-7-3 | Dotaz |
|
IPB180N04S4H0ATMA1 | Infineon Technologies | MOSFET N-CH 40V 180A TO263-7-3 | Dotaz |
|
IPB180N04S400ATMA1 | Infineon Technologies | MOSFET N-CH 40V 180A TO263-7-3 | Dotaz |
|
IPB180N04S4LH0ATMA1 | Infineon Technologies | MOSFET N-CH TO263-7 | Dotaz |
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