Koupit IPB065N15N3GE8187ATMA1 s BYCHPS
Koupit se zárukou
IPB065N15N3GE8187ATMA1
- Part Number:
- IPB065N15N3GE8187ATMA1
- Popis:
- MOSFET N-CH 150V 130A TO263-7
- Stav volného vedení / RoHS:
- Bez olova / V souladu RoHS
- dostupné množství:
- 14748 Pieces
- Datový list:
- IPB065N15N3GE8187ATMA1.pdf
Úvod
BYCHIPS je distribuční odrůda pro IPB065N15N3GE8187ATMA1, máme zásoby pro okamžitou přepravu a také k dispozici pro dlouhodobé zásobování. Zašlete nám svůj plán nákupu IPB065N15N3GE8187ATMA1 e-mailem vám poskytneme nejlepší cenu podle svého plánu.
Specifikace
| Vgs (th) (max) 'Id: | 4V @ 270µA |
|---|---|
| Technika: | MOSFET (Metal Oxide) |
| Dodavatel zařízení Package: | PG-TO263-7 |
| Série: | OptiMOS™ |
| RDS On (Max) @ Id, Vgs: | 6.5 mOhm @ 100A, 10V |
| Ztráta energie (Max): | 300W (Tc) |
| Obal: | Tape & Reel (TR) |
| Paket / krabice: | TO-263-7, D²Pak (6 Leads + Tab), TO-263CB |
| Ostatní jména: | IPB065N15N3 G E8187 IPB065N15N3 G E8187-ND IPB065N15N3 G E8187TR-ND SP000939336 |
| Provozní teplota: | -55°C ~ 175°C (TJ) |
| Typ montáže: | Surface Mount |
| Úroveň citlivosti na vlhkost (MSL): | 1 (Unlimited) |
| Výrobní číslo výrobce: | IPB065N15N3GE8187ATMA1 |
| Vstupní kapacita (Ciss) (Max) @ Vds: | 7300pF @ 75V |
| Nabíjení brány (Qg) (Max) @ Vgs: | 93nC @ 10V |
| Typ FET: | N-Channel |
| FET Feature: | - |
| Rozšířený popis: | N-Channel 150V 130A (Tc) 300W (Tc) Surface Mount PG-TO263-7 |
| Drain na zdroj napětí (Vdss): | 150V |
| Popis: | MOSFET N-CH 150V 130A TO263-7 |
| Proud - kontinuální odtok (Id) @ 25 ° C: | 130A (Tc) |
| Email: | [email protected] |
Související díly pro IPB065N15N3GE8187ATMA1
| Obraz | Part Number | Výrobci | Popis | Pohled |
|---|---|---|---|---|
 |
IPB065N03L G | Infineon Technologies | MOSFET N-CH 30V 50A TO-263-3 | Dotaz |
|
IPB065N10N3GATMA1 | Infineon Technologies | MOSFET N-CH TO263-3 | Dotaz |
|
IPB06N03LAT | Infineon Technologies | MOSFET N-CH 25V 50A D2PAK | Dotaz |
|
IPB065N06L G | Infineon Technologies | MOSFET N-CH 60V 80A D2PAK | Dotaz |
 |
IPB065N15N3 G | Infineon Technologies | MOSFET N-CH 150V 130A TO263-7 | Dotaz |
 |
PMT760EN,135 | NXP USA Inc. | MOSFET N-CH 100V SC-73 | Dotaz |
|
IPB06N03LB G | Infineon Technologies | MOSFET N-CH 30V 50A D2PAK | Dotaz |
|
IPB06N03LA G | Infineon Technologies | MOSFET N-CH 25V 50A D2PAK | Dotaz |
|
IPB067N08N3 G | Infineon Technologies | MOSFET N-CH 80V 80A TO263-3 | Dotaz |
|
IPB06N03LB | Infineon Technologies | MOSFET N-CH 30V 50A D2PAK | Dotaz |
|
IPB06N03LA | Infineon Technologies | MOSFET N-CH 25V 50A D2PAK | Dotaz |
|
IPB06CN10N G | Infineon Technologies | MOSFET N-CH 100V 100A TO263-3 | Dotaz |
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