Koupit IPB04N03LAT s BYCHPS
Koupit se zárukou
IPB04N03LAT
- Part Number:
- IPB04N03LAT
- Popis:
- MOSFET N-CH 25V 80A D2PAK
- Stav volného vedení / RoHS:
- Bez olova / V souladu RoHS
- dostupné množství:
- 13107 Pieces
- Datový list:
- IPB04N03LAT.pdf
Úvod
BYCHIPS je distribuční odrůda pro IPB04N03LAT, máme zásoby pro okamžitou přepravu a také k dispozici pro dlouhodobé zásobování. Zašlete nám svůj plán nákupu IPB04N03LAT e-mailem vám poskytneme nejlepší cenu podle svého plánu.
Specifikace
| Vgs (th) (max) 'Id: | 2V @ 60µA |
|---|---|
| Technika: | MOSFET (Metal Oxide) |
| Dodavatel zařízení Package: | PG-TO263-3-2 |
| Série: | OptiMOS™ |
| RDS On (Max) @ Id, Vgs: | 3.9 mOhm @ 55A, 10V |
| Ztráta energie (Max): | 107W (Tc) |
| Obal: | Original-Reel® |
| Paket / krabice: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Ostatní jména: | IPB04N03LAXTINDKR |
| Provozní teplota: | -55°C ~ 175°C (TJ) |
| Typ montáže: | Surface Mount |
| Úroveň citlivosti na vlhkost (MSL): | 1 (Unlimited) |
| Výrobní číslo výrobce: | IPB04N03LAT |
| Vstupní kapacita (Ciss) (Max) @ Vds: | 3877pF @ 15V |
| Nabíjení brány (Qg) (Max) @ Vgs: | 32nC @ 5V |
| Typ FET: | N-Channel |
| FET Feature: | - |
| Rozšířený popis: | N-Channel 25V 80A (Tc) 107W (Tc) Surface Mount PG-TO263-3-2 |
| Drain na zdroj napětí (Vdss): | 25V |
| Popis: | MOSFET N-CH 25V 80A D2PAK |
| Proud - kontinuální odtok (Id) @ 25 ° C: | 80A (Tc) |
| Email: | [email protected] |
Související díly pro IPB04N03LAT
| Obraz | Part Number | Výrobci | Popis | Pohled |
|---|---|---|---|---|
 |
IPB04N03LA | Infineon Technologies | MOSFET N-CH 25V 80A D2PAK | Dotaz |
|
IPB04N03LB | Infineon Technologies | MOSFET N-CH 30V 80A D2PAK | Dotaz |
|
IPB041N04NGATMA1 | Infineon Technologies | MOSFET N-CH 40V 80A TO263-3 | Dotaz |
 |
IPB044N15N5ATMA1 | Infineon Technologies | MV POWER MOS | Dotaz |
|
IPB049N06L3GATMA1 | Infineon Technologies | MOSFET N-CH 60V 80A TO263-3 | Dotaz |
|
IPB042N10N3 G | Infineon Technologies | MOSFET N-CH 100V 100A TO263-3 | Dotaz |
|
IPB04N03LA G | Infineon Technologies | MOSFET N-CH 25V 80A TO-263 | Dotaz |
|
IPB04N03LB G | Infineon Technologies | MOSFET N-CH 30V 80A D2PAK | Dotaz |
|
IPB042N10N3GE8187ATMA1 | Infineon Technologies | MOSFET N-CH 100V 100A TO263-3 | Dotaz |
|
IPB049N08N5ATMA1 | Infineon Technologies | MOSFET N-CH 80V TO263-3 | Dotaz |
|
IPB048N06LGATMA1 | Infineon Technologies | MOSFET N-CH 60V 100A TO-263 | Dotaz |
|
IPB049NE7N3 G | Infineon Technologies | MOSFET N-CH 75V 80A TO263-3 | Dotaz |
Latest News
- Xilinx Ships Industry's First 16nm All Programmable MPSoC Ahead of Schedule
- Xilinx and Samsung Jointly Enable the World's First 5G NR Commercial Deployment
- TI to reduce costs in Wireless business; OMAP™ processors and wireless connectivity solutions will focus on embedded markets
- TI's Peter Balyta to head Education Technology division; Melendy Lovett to retire
- Janet Clark to join TI board of directors
- TI unveils DLP® 0.66-inch 4K ultra-high definition (UHD) chip, enabling more affordable large screen projection displays for home, business and education
- GCHQ Director calls for international cyber pact
- Embedded World: Arm introduces fourth security element to PSA
- Last chance: Nominate BrightSparks before 28 February
- Embedded World 2019: Get the full Electronics Weekly Guide
- "Xcell Journal" Special Edition: Xilinx Customers Shape a Brilliant Future
- Xilinx Launches Public Access of the SDSoC Development Environment to Expand Zynq SoC User Base to Broad Community of Systems and Software Engineers