Koupit BUK653R2-55C,127 s BYCHPS
Koupit se zárukou
BUK653R2-55C,127
- Part Number:
- BUK653R2-55C,127
- Výrobce:
- NXP Semiconductors / Freescale
- Popis:
- MOSFET N-CH 55V 120A TO220AB
- Stav volného vedení / RoHS:
- Obsahuje olověný / RoHS neodpovídající
- dostupné množství:
- 12001 Pieces
- Datový list:
- BUK653R2-55C,127.pdf
Úvod
BYCHIPS je distribuční odrůda pro BUK653R2-55C,127, máme zásoby pro okamžitou přepravu a také k dispozici pro dlouhodobé zásobování. Zašlete nám svůj plán nákupu BUK653R2-55C,127 e-mailem vám poskytneme nejlepší cenu podle svého plánu.
Specifikace
| Vgs (th) (max) 'Id: | 2.8V @ 1mA |
|---|---|
| Technika: | MOSFET (Metal Oxide) |
| Dodavatel zařízení Package: | TO-220AB |
| Série: | TrenchMOS™ |
| RDS On (Max) @ Id, Vgs: | 3.2 mOhm @ 25A, 10V |
| Ztráta energie (Max): | 306W (Tc) |
| Obal: | Tube |
| Paket / krabice: | TO-220-3 |
| Ostatní jména: | 568-7495-5 934064468127 BUK653R2-55C,127-ND BUK653R255C127 |
| Provozní teplota: | -55°C ~ 175°C (TJ) |
| Typ montáže: | Through Hole |
| Úroveň citlivosti na vlhkost (MSL): | 1 (Unlimited) |
| Výrobní číslo výrobce: | BUK653R2-55C,127 |
| Vstupní kapacita (Ciss) (Max) @ Vds: | 15300pF @ 25V |
| Nabíjení brány (Qg) (Max) @ Vgs: | 258nC @ 10V |
| Typ FET: | N-Channel |
| FET Feature: | - |
| Rozšířený popis: | N-Channel 55V 120A (Tc) 306W (Tc) Through Hole TO-220AB |
| Drain na zdroj napětí (Vdss): | 55V |
| Popis: | MOSFET N-CH 55V 120A TO220AB |
| Proud - kontinuální odtok (Id) @ 25 ° C: | 120A (Tc) |
| Email: | [email protected] |
Související díly pro BUK653R2-55C,127
| Obraz | Part Number | Výrobci | Popis | Pohled |
|---|---|---|---|---|
 |
SIR470DP-T1-GE3 | Vishay Siliconix | MOSFET N-CH 40V 60A PPAK SO-8 | Dotaz |
 |
BUK653R3-30C,127 | Nexperia USA Inc. | MOSFET N-CH 30V 100A TO-220AB | Dotaz |
 |
BUK654R0-75C,127 | NXP USA Inc. | MOSFET N-CH 75V 120A TO220AB | Dotaz |
|
BUK6510-75C,127 | NXP USA Inc. | MOSFET N-CH 75V 77A TO220AB | Dotaz |
 |
STFI4N62K3 | STMicroelectronics | MOSFET N CH 620V 3.8A I2PAKFP | Dotaz |
 |
IXTV30N60PS | IXYS | MOSFET N-CH 600V 30A PLUS220-SMD | Dotaz |
|
BUK652R7-30C,127 | NXP USA Inc. | MOSFET N-CH 30V 100A TO220AB | Dotaz |
|
BUK654R8-40C,127 | NXP USA Inc. | MOSFET N-CH 40V 100A TO220AB | Dotaz |
|
BUK652R0-30C,127 | NXP USA Inc. | MOSFET N-CH 30V 120A TO220AB | Dotaz |
|
BUK653R7-30C,127 | NXP USA Inc. | MOSFET N-CH 30V 100A TO220AB | Dotaz |
|
BUK6507-75C,127 | Nexperia USA Inc. | MOSFET N-CH 75V 100A TO220AB | Dotaz |
|
BUK652R3-40C,127 | NXP USA Inc. | MOSFET N-CH 40V 120A TO220AB | Dotaz |
|
BUK653R5-55C,127 | NXP USA Inc. | MOSFET N-CH 55V 120A TO220AB | Dotaz |
|
BUK655R0-75C,127 | NXP USA Inc. | MOSFET N-CH 75V 120A TO220AB | Dotaz |
|
BUK654R6-55C,127 | NXP USA Inc. | MOSFET N-CH 55V 100A TO220AB | Dotaz |
|
BUK6507-55C,127 | NXP USA Inc. | MOSFET N-CH 55V 100A TO220AB | Dotaz |
|
BUK652R1-30C,127 | NXP USA Inc. | MOSFET N-CH 30V 120A TO220AB | Dotaz |
Latest News
- Xilinx Ships Industry's First 16nm All Programmable MPSoC Ahead of Schedule
- Xilinx and Samsung Jointly Enable the World's First 5G NR Commercial Deployment
- TI to reduce costs in Wireless business; OMAP™ processors and wireless connectivity solutions will focus on embedded markets
- TI's Peter Balyta to head Education Technology division; Melendy Lovett to retire
- Janet Clark to join TI board of directors
- TI unveils DLP® 0.66-inch 4K ultra-high definition (UHD) chip, enabling more affordable large screen projection displays for home, business and education
- GCHQ Director calls for international cyber pact
- Embedded World: Arm introduces fourth security element to PSA
- Last chance: Nominate BrightSparks before 28 February
- Embedded World 2019: Get the full Electronics Weekly Guide
- "Xcell Journal" Special Edition: Xilinx Customers Shape a Brilliant Future
- Xilinx Launches Public Access of the SDSoC Development Environment to Expand Zynq SoC User Base to Broad Community of Systems and Software Engineers