Koupit BLF6G10LS-200,118 s BYCHPS
Koupit se zárukou
BLF6G10LS-200,118
- Part Number:
- BLF6G10LS-200,118
- Výrobce:
- NXP Semiconductors / Freescale
- Popis:
- FET RF 65V 871.5MHZ SOT502B
- Stav volného vedení / RoHS:
- Bez olova / V souladu RoHS
- dostupné množství:
- 15560 Pieces
- Datový list:
- BLF6G10LS-200,118.pdf
Úvod
BYCHIPS je distribuční odrůda pro BLF6G10LS-200,118, máme zásoby pro okamžitou přepravu a také k dispozici pro dlouhodobé zásobování. Zašlete nám svůj plán nákupu BLF6G10LS-200,118 e-mailem vám poskytneme nejlepší cenu podle svého plánu.
Specifikace
| Napětí - Test: | 28V |
|---|---|
| Napětí - Jmenovitá: | 65V |
| Transistor Type: | LDMOS |
| Dodavatel zařízení Package: | SOT502B |
| Série: | - |
| Power - Výstup: | 40W |
| Obal: | Tape & Reel (TR) |
| Paket / krabice: | SOT-502B |
| Ostatní jména: | 934060895118 BLF6G10LS-200 /T3 BLF6G10LS-200 /T3-ND |
| hluk Obrázek: | - |
| Úroveň citlivosti na vlhkost (MSL): | 1 (Unlimited) |
| Výrobní číslo výrobce: | BLF6G10LS-200,118 |
| Získat: | 20.2dB |
| Frekvence: | 871.5MHz |
| Rozšířený popis: | RF Mosfet LDMOS 28V 1.4A 871.5MHz 20.2dB 40W SOT502B |
| Popis: | FET RF 65V 871.5MHZ SOT502B |
| Jmenovitá hodnota proudu: | 49A |
| Aktuální - Test: | 1.4A |
| Email: | [email protected] |
Související díly pro BLF6G10LS-200,118
| Obraz | Part Number | Výrobci | Popis | Pohled |
|---|---|---|---|---|
 |
J310_D27Z | Fairchild/ON Semiconductor | JFET N-CH 25V 60MA TO92 | Dotaz |
 |
MMRF1316NR1 | NXP USA Inc. | FET RF 2CH 133V 230MHZ TO270 | Dotaz |
|
J310 | Fairchild/ON Semiconductor | JFET N-CH 25V 60MA TO92 | Dotaz |
 |
PTFA212001FV4XWSA1 | Infineon Technologies | IC FET RF LDMOS 200W H-37260-2 | Dotaz |
 |
BLF6G20S-230PRN:11 | NXP USA Inc. | TRANSISTOR PWR LDMOS SOT539B | Dotaz |
 |
MMRF1314GSR5 | NXP USA Inc. | TRANS 960-1215MHZ 1000W PEAK 50V | Dotaz |
 |
BLF6G10LS-200,112 | NXP USA Inc. | FET RF 65V 871.5MHZ SOT502B | Dotaz |
|
BLF6G27LS-100,118 | NXP USA Inc. | TRANS PWR LDMOS SOT502 | Dotaz |
|
BLF6G27LS-50BN,112 | NXP USA Inc. | TRANSISTOR RF PWR LDMOS SOT1112B | Dotaz |
 |
BLF6G24-180PN,112 | NXP USA Inc. | TRANSISTOR PWR LDMOS SOT539A | Dotaz |
 |
MRF9080LR3 | NXP USA Inc. | FET RF 65V 960MHZ NI-780 | Dotaz |
 |
BLF882U | Ampleon USA Inc. | RF FET LDMOS 104V 20.6DB SOT502A | Dotaz |
|
AFT21S230SR3 | NXP USA Inc. | FET RF 65V 2.11GHZ NI780S-6 | Dotaz |
|
BLF6G20-230P | NXP USA Inc. | IC BASESTATION FINAL SOT502A | Dotaz |
 |
BLM7G1822S-40ABY | Ampleon USA Inc. | RF FET LDMOS 65V 31.5DB SOT12112 | Dotaz |
 |
2N5485_D74Z | Fairchild/ON Semiconductor | JFET N-CH 25V 10MA TO92 | Dotaz |
|
BLF6G27LS-50BN,118 | NXP USA Inc. | TRANSISTOR RF PWR LDMOS SOT1112B | Dotaz |
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