Koupit SUP60N10-16L-E3 s BYCHPS
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SUP60N10-16L-E3
- Part Number:
- SUP60N10-16L-E3
- Výrobce:
- Vishay / Siliconix
- Popis:
- MOSFET N-CH 100V 60A TO220AB
- Stav volného vedení / RoHS:
- Bez olova / V souladu RoHS
- dostupné množství:
- 16900 Pieces
- Datový list:
- 1.SUP60N10-16L-E3.pdf2.SUP60N10-16L-E3.pdf
Úvod
BYCHIPS je distribuční odrůda pro SUP60N10-16L-E3, máme zásoby pro okamžitou přepravu a také k dispozici pro dlouhodobé zásobování. Zašlete nám svůj plán nákupu SUP60N10-16L-E3 e-mailem vám poskytneme nejlepší cenu podle svého plánu.
Specifikace
| Vgs (th) (max) 'Id: | 3V @ 250µA |
|---|---|
| Technika: | MOSFET (Metal Oxide) |
| Dodavatel zařízení Package: | TO-220AB |
| Série: | TrenchFET® |
| RDS On (Max) @ Id, Vgs: | 16 mOhm @ 30A, 10V |
| Ztráta energie (Max): | 150W (Tc) |
| Obal: | Tape & Reel (TR) |
| Paket / krabice: | TO-220-3 |
| Provozní teplota: | -55°C ~ 175°C (TJ) |
| Typ montáže: | Through Hole |
| Úroveň citlivosti na vlhkost (MSL): | 1 (Unlimited) |
| Výrobní číslo výrobce: | SUP60N10-16L-E3 |
| Vstupní kapacita (Ciss) (Max) @ Vds: | 3820pF @ 25V |
| Nabíjení brány (Qg) (Max) @ Vgs: | 110nC @ 10V |
| Typ FET: | N-Channel |
| FET Feature: | - |
| Rozšířený popis: | N-Channel 100V 60A (Tc) 150W (Tc) Through Hole TO-220AB |
| Drain na zdroj napětí (Vdss): | 100V |
| Popis: | MOSFET N-CH 100V 60A TO220AB |
| Proud - kontinuální odtok (Id) @ 25 ° C: | 60A (Tc) |
| Email: | [email protected] |
Související díly pro SUP60N10-16L-E3
| Obraz | Part Number | Výrobci | Popis | Pohled |
|---|---|---|---|---|
 |
SUP60N10-18P-E3 | Vishay Siliconix | MOSFET N-CH 100V 60A TO220AB | Dotaz |
 |
DMP2039UFDE4-7 | Diodes Incorporated | MOSFET P-CH 25V 7.3A 6DFN | Dotaz |
 |
IRFZ44VS | Infineon Technologies | MOSFET N-CH 60V 55A D2PAK | Dotaz |
 |
CSD13306WT | Texas Instruments | MOSFET N-CH 12V 6DSBGA | Dotaz |
|
SUP60N06-12P-E3 | Vishay Siliconix | MOSFET N-CH 60V 60A TO220AB | Dotaz |
 |
IRFH5306TR2PBF | Infineon Technologies | MOSFET N-CH 30V 15A 5X6 PQFN | Dotaz |
 |
AOT254L | Alpha & Omega Semiconductor Inc. | MOSFET N-CH 150V 4.2A TO220 | Dotaz |
 |
2N7636-GA | GeneSiC Semiconductor | TRANS SJT 650V 4A TO276 | Dotaz |
 |
IXTA38N15T | IXYS | MOSFET N-CH 150V 38A TO-263 | Dotaz |
 |
IRF9392TRPBF | Infineon Technologies | MOSFET P-CH 30V 9.8A 8SOIC | Dotaz |
|
SUP60030E-GE3 | Vishay Siliconix | MOSFET N-CH 80V 120A TO220AB | Dotaz |
 |
IXFT36N60P | IXYS | MOSFET N-CH 600V 36A TO-268 D3 | Dotaz |
 |
IRLMS6702TR | Infineon Technologies | MOSFET P-CH 20V 2.4A 6-TSOP | Dotaz |
|
SUP60N06-12P-GE3 | Vishay Siliconix | MOSFET N-CH 60V 60A TO220AB | Dotaz |
 |
IXFP130N10T2 | IXYS | MOSFET N-CH 100V 130A TO-220 | Dotaz |
 |
BSB012NE2LX | Infineon Technologies | MOSFET N-CH 25V 170A WDSON-2 | Dotaz |
|
SUP60N02-4M5P-E3 | Vishay Siliconix | MOSFET N-CH 20V 60A TO220AB | Dotaz |
|
SIHP18N50C-E3 | Vishay Siliconix | MOSFET N-CH 500V 18A TO220 | Dotaz |
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