Koupit SI4501BDY-T1-GE3 s BYCHPS
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SI4501BDY-T1-GE3
- Part Number:
- SI4501BDY-T1-GE3
- Výrobce:
- Vishay / Siliconix
- Popis:
- MOSFET N/P-CH 30V/8V 8SOIC
- Stav volného vedení / RoHS:
- Bez olova / V souladu RoHS
- dostupné množství:
- 18147 Pieces
- Datový list:
- SI4501BDY-T1-GE3.pdf
Úvod
BYCHIPS je distribuční odrůda pro SI4501BDY-T1-GE3, máme zásoby pro okamžitou přepravu a také k dispozici pro dlouhodobé zásobování. Zašlete nám svůj plán nákupu SI4501BDY-T1-GE3 e-mailem vám poskytneme nejlepší cenu podle svého plánu.
Specifikace
| Vgs (th) (max) 'Id: | 2V @ 250µA |
|---|---|
| Dodavatel zařízení Package: | 8-SOIC |
| Série: | TrenchFET® |
| RDS On (Max) @ Id, Vgs: | 17 mOhm @ 10A, 10V |
| Power - Max: | 4.5W, 3.1W |
| Obal: | Original-Reel® |
| Paket / krabice: | 8-SOIC (0.154", 3.90mm Width) |
| Ostatní jména: | SI4501BDY-T1-GE3DKR |
| Provozní teplota: | -55°C ~ 150°C (TJ) |
| Typ montáže: | Surface Mount |
| Úroveň citlivosti na vlhkost (MSL): | 1 (Unlimited) |
| Výrobní standardní doba výroby: | 24 Weeks |
| Výrobní číslo výrobce: | SI4501BDY-T1-GE3 |
| Vstupní kapacita (Ciss) (Max) @ Vds: | 805pF @ 15V |
| Nabíjení brány (Qg) (Max) @ Vgs: | 25nC @ 10V |
| Typ FET: | N and P-Channel, Common Drain |
| FET Feature: | Logic Level Gate |
| Rozšířený popis: | Mosfet Array N and P-Channel, Common Drain 30V, 8V 12A, 8A 4.5W, 3.1W Surface Mount 8-SOIC |
| Drain na zdroj napětí (Vdss): | 30V, 8V |
| Popis: | MOSFET N/P-CH 30V/8V 8SOIC |
| Proud - kontinuální odtok (Id) @ 25 ° C: | 12A, 8A |
| Email: | [email protected] |
Související díly pro SI4501BDY-T1-GE3
| Obraz | Part Number | Výrobci | Popis | Pohled |
|---|---|---|---|---|
 |
NDC7002N_SB9G007 | Fairchild/ON Semiconductor | MOSFET 2N-CH 50V 0.51A 6-SSOT | Dotaz |
 |
FDMS3606AS | Fairchild/ON Semiconductor | MOSFET 2N-CH 30V 13A/27A PWR56 | Dotaz |
 |
SI4501ADY-T1-GE3 | Vishay Siliconix | MOSFET N/P-CH 30V/8V 8-SOIC | Dotaz |
|
SI4500BDY-T1-E3 | Vishay Siliconix | MOSFET N/P-CH 20V 6.6A 8SOIC | Dotaz |
 |
DMC2700UDM-7 | Diodes Incorporated | MOSFET N/P-CH 20V SOT26 | Dotaz |
|
SI4505DY-T1-E3 | Vishay Siliconix | MOSFET N/P-CH 30V/8V 8-SOIC | Dotaz |
|
SI4500BDY-T1-GE3 | Vishay Siliconix | MOSFET N/P-CH 20V 6.6A 8-SOIC | Dotaz |
 |
CMLDM7002AG TR | Central Semiconductor Corp | MOSFET 2N-CH 60V 0.28A SOT563 | Dotaz |
|
SI4505DY-T1-GE3 | Vishay Siliconix | MOSFET N/P-CH 30V/8V 8-SOIC | Dotaz |
 |
TT8K2TR | Rohm Semiconductor | MOSFET 2N-CH 30V 2.5A TSST8 | Dotaz |
|
SI4501ADY-T1-E3 | Vishay Siliconix | MOSFET N/P-CH 30V/8V 8SOIC | Dotaz |
 |
DMN2022UNS-7 | Diodes Incorporated | MOSFET 2NCH 20V 10.7A POWERDI | Dotaz |
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