Koupit RN1610(TE85L,F) s BYCHPS
Koupit se zárukou
RN1610(TE85L,F)
- Part Number:
- RN1610(TE85L,F)
- Výrobce:
- Toshiba Semiconductor
- Popis:
- TRANS 2NPN PREBIAS 0.3W SM6
- Stav volného vedení / RoHS:
- Bez olova / V souladu RoHS
- dostupné množství:
- 17698 Pieces
- Datový list:
- RN1610(TE85L,F).pdf
Úvod
BYCHIPS je distribuční odrůda pro RN1610(TE85L,F), máme zásoby pro okamžitou přepravu a také k dispozici pro dlouhodobé zásobování. Zašlete nám svůj plán nákupu RN1610(TE85L,F) e-mailem vám poskytneme nejlepší cenu podle svého plánu.
Specifikace
| Napětí - kolektoru emitoru Breakdown (Max): | 50V |
|---|---|
| VCE Saturation (Max) @ IB, IC: | 300mV @ 250µA, 5mA |
| Transistor Type: | 2 NPN - Pre-Biased (Dual) |
| Dodavatel zařízení Package: | SM6 |
| Série: | - |
| Odpor - Vysílač Base (R2) (Ohm): | - |
| Odpor - Base (R1) (Ohm): | 4.7k |
| Power - Max: | 300mW |
| Obal: | Tape & Reel (TR) |
| Paket / krabice: | SC-74, SOT-457 |
| Ostatní jména: | RN1610(TE85LF)TR |
| Typ montáže: | Surface Mount |
| Úroveň citlivosti na vlhkost (MSL): | 1 (Unlimited) |
| Výrobní číslo výrobce: | RN1610(TE85L,F) |
| Frekvence - Přechod: | 250MHz |
| Rozšířený popis: | Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250MHz 300mW Surface Mount SM6 |
| Popis: | TRANS 2NPN PREBIAS 0.3W SM6 |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 120 @ 1mA, 5V |
| Aktuální - sběratel Cutoff (Max): | 100nA (ICBO) |
| Proud - Collector (Ic) (Max): | 100mA |
| Email: | [email protected] |
Související díly pro RN1610(TE85L,F)
| Obraz | Part Number | Výrobci | Popis | Pohled |
|---|---|---|---|---|
 |
RN1611(TE85L,F) | Toshiba Semiconductor and Storage | TRANS 2NPN PREBIAS 0.3W SM6 | Dotaz |
 |
EMH59T2R | Rohm Semiconductor | TRANS 2NPN PREBIAS 0.15W EMT6 | Dotaz |
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