Koupit RAQ045P01TCR s BYCHPS
Koupit se zárukou
RAQ045P01TCR
- Part Number:
- RAQ045P01TCR
- Výrobce:
- LAPIS Semiconductor
- Popis:
- MOSFET P-CH 12V 4.5A TUMT6
- Stav volného vedení / RoHS:
- Bez olova / V souladu RoHS
- dostupné množství:
- 16325 Pieces
- Datový list:
- RAQ045P01TCR.pdf
Úvod
BYCHIPS je distribuční odrůda pro RAQ045P01TCR, máme zásoby pro okamžitou přepravu a také k dispozici pro dlouhodobé zásobování. Zašlete nám svůj plán nákupu RAQ045P01TCR e-mailem vám poskytneme nejlepší cenu podle svého plánu.
Specifikace
| Vgs (th) (max) 'Id: | 1V @ 1mA |
|---|---|
| Vgs (Max): | -8V |
| Technika: | MOSFET (Metal Oxide) |
| Dodavatel zařízení Package: | TSMT6 (SC-95) |
| Série: | - |
| RDS On (Max) @ Id, Vgs: | 30 mOhm @ 4.5A, 4.5V |
| Ztráta energie (Max): | 600mW (Ta) |
| Obal: | Tape & Reel (TR) |
| Paket / krabice: | SOT-23-6 Thin, TSOT-23-6 |
| Ostatní jména: | RAQ045P01TCRTR |
| Provozní teplota: | 150°C (TJ) |
| Typ montáže: | Surface Mount |
| Úroveň citlivosti na vlhkost (MSL): | 1 (Unlimited) |
| Výrobní číslo výrobce: | RAQ045P01TCR |
| Vstupní kapacita (Ciss) (Max) @ Vds: | 4200pF @ 6V |
| Nabíjení brány (Qg) (Max) @ Vgs: | 40nC @ 4.5V |
| Typ FET: | P-Channel |
| FET Feature: | - |
| Rozšířený popis: | P-Channel 12V 4.5A (Ta) 600mW (Ta) Surface Mount TSMT6 (SC-95) |
| Napětí měniče (max. Zap. RDS, min. Zap. Zap.): | 1.5V, 4.5V |
| Drain na zdroj napětí (Vdss): | 12V |
| Popis: | MOSFET P-CH 12V 4.5A TUMT6 |
| Proud - kontinuální odtok (Id) @ 25 ° C: | 4.5A (Ta) |
| Email: | [email protected] |
Související díly pro RAQ045P01TCR
| Obraz | Part Number | Výrobci | Popis | Pohled |
|---|---|---|---|---|
 |
IXTY2N100P | IXYS | MOSFET N-CH 1000V 2A TO-252 | Dotaz |
 |
BUK9506-55B,127 | NXP USA Inc. | MOSFET N-CH 55V 75A TO220AB | Dotaz |
 |
IXFT20N60Q | IXYS | MOSFET N-CH 600V 20A TO-268 | Dotaz |
 |
SQ2315ES-T1_GE3 | Vishay Siliconix | MOSFET P-CHAN 12V SOT23 | Dotaz |
 |
STB60NF10-1 | STMicroelectronics | MOSFET N-CH 100V 80A I2PAK | Dotaz |
 |
IXTA2N100P | IXYS | MOSFET N-CH 1000V 2A TO-263 | Dotaz |
 |
IXTH220N075T | IXYS | MOSFET N-CH 75V 220A TO-247 | Dotaz |
 |
STD100N10F7 | STMicroelectronics | MOSFET N CH 100V 80A DPAK | Dotaz |
 |
TPCC8005-H(TE12LQM | Toshiba Semiconductor and Storage | MOSFET N-CH 30V 26A 8TSON | Dotaz |
 |
RAQ045P01MGTCR | Rohm Semiconductor | 1.5V DRIVE PCH MOSFET | Dotaz |
 |
SUM110N05-06L-E3 | Vishay Siliconix | MOSFET N-CH 55V 110A D2PAK | Dotaz |
 |
STF4N52K3 | STMicroelectronics | MOSFET N-CH 525V 2.5A TO-220FP | Dotaz |
 |
RF4E080GNTR | Rohm Semiconductor | MOSFET N-CH 30V 8A 8-HUML | Dotaz |
|
IRF737LCSTRR | Vishay Siliconix | MOSFET N-CH 300V 6.1A D2PAK | Dotaz |
 |
FCD3400N80Z | Fairchild/ON Semiconductor | MOSFET N-CH 800V 2A D2PAK | Dotaz |
|
IXTA64N10L2 | IXYS | N-CHANNEL: LINEAR POWER MOSFETS | Dotaz |
 |
NVGS5120PT1G | ON Semiconductor | MOSFET P-CH 60V 1.8A 6TSOP | Dotaz |
Latest News
- Xilinx Ships Industry's First 16nm All Programmable MPSoC Ahead of Schedule
- Xilinx and Samsung Jointly Enable the World's First 5G NR Commercial Deployment
- TI to reduce costs in Wireless business; OMAP™ processors and wireless connectivity solutions will focus on embedded markets
- TI's Peter Balyta to head Education Technology division; Melendy Lovett to retire
- Janet Clark to join TI board of directors
- TI unveils DLP® 0.66-inch 4K ultra-high definition (UHD) chip, enabling more affordable large screen projection displays for home, business and education
- GCHQ Director calls for international cyber pact
- Embedded World: Arm introduces fourth security element to PSA
- Last chance: Nominate BrightSparks before 28 February
- Embedded World 2019: Get the full Electronics Weekly Guide
- "Xcell Journal" Special Edition: Xilinx Customers Shape a Brilliant Future
- Xilinx Launches Public Access of the SDSoC Development Environment to Expand Zynq SoC User Base to Broad Community of Systems and Software Engineers