Koupit NTQS6463R2 s BYCHPS
Koupit se zárukou
NTQS6463R2
- Part Number:
- NTQS6463R2
- Popis:
- MOSFET P-CH 20V 6.8A 8-TSSOP
- Stav volného vedení / RoHS:
- Obsahuje olověný / RoHS neodpovídající
- dostupné množství:
- 14584 Pieces
- Datový list:
- NTQS6463R2.pdf
Úvod
BYCHIPS je distribuční odrůda pro NTQS6463R2, máme zásoby pro okamžitou přepravu a také k dispozici pro dlouhodobé zásobování. Zašlete nám svůj plán nákupu NTQS6463R2 e-mailem vám poskytneme nejlepší cenu podle svého plánu.
Specifikace
| Vgs (th) (max) 'Id: | 900mV @ 250µA |
|---|---|
| Technika: | MOSFET (Metal Oxide) |
| Dodavatel zařízení Package: | 8-TSSOP |
| Série: | - |
| RDS On (Max) @ Id, Vgs: | 20 mOhm @ 6.8A, 4.5V |
| Ztráta energie (Max): | 930mW (Ta) |
| Obal: | Tape & Reel (TR) |
| Paket / krabice: | 8-TSSOP (0.173", 4.40mm Width) |
| Ostatní jména: | NTQS6463R2OS |
| Provozní teplota: | -55°C ~ 150°C (TJ) |
| Typ montáže: | Surface Mount |
| Úroveň citlivosti na vlhkost (MSL): | 1 (Unlimited) |
| Výrobní číslo výrobce: | NTQS6463R2 |
| Vstupní kapacita (Ciss) (Max) @ Vds: | - |
| Nabíjení brány (Qg) (Max) @ Vgs: | 50nC @ 5V |
| Typ FET: | P-Channel |
| FET Feature: | - |
| Rozšířený popis: | P-Channel 20V 6.8A (Ta) 930mW (Ta) Surface Mount 8-TSSOP |
| Drain na zdroj napětí (Vdss): | 20V |
| Popis: | MOSFET P-CH 20V 6.8A 8-TSSOP |
| Proud - kontinuální odtok (Id) @ 25 ° C: | 6.8A (Ta) |
| Email: | [email protected] |
Související díly pro NTQS6463R2
| Obraz | Part Number | Výrobci | Popis | Pohled |
|---|---|---|---|---|
 |
RRS100N03TB1 | Rohm Semiconductor | MOSFET N-CH 30V 10A 8-SOIC | Dotaz |
 |
IRLIZ14G | Vishay Siliconix | MOSFET N-CH 60V 8A TO220FP | Dotaz |
 |
IXFX64N50P | IXYS | MOSFET N-CH 500V 64A PLUS247 | Dotaz |
 |
IPB011N04NGATMA1 | Infineon Technologies | MOSFET N-CH 40V 180A TO263-7 | Dotaz |
 |
BSP324L6327HTSA1 | Infineon Technologies | MOSFET N-CH 400V 170MA SOT-223 | Dotaz |
 |
CSD13381F4 | Texas Instruments | MOSFET N-CH 12V 2.1A 3PICOSTAR | Dotaz |
 |
CTLDM7120-M621H TR | Central Semiconductor Corp | MOSFET N-CH 20V 1A | Dotaz |
 |
SQJA62EP-T1_GE3 | Vishay Siliconix | MOSFET N-CH 60V 60A SO8 | Dotaz |
 |
IXTK102N30P | IXYS | MOSFET N-CH 300V 102A TO-264 | Dotaz |
 |
IRF7805PBF | Infineon Technologies | MOSFET N-CH 30V 13A 8-SOIC | Dotaz |
 |
STP10NK70Z | STMicroelectronics | MOSFET N-CH 700V 8.6A TO-220 | Dotaz |
 |
PMN48XP,115 | Nexperia USA Inc. | MOSFET P-CH 20V 4.1A 6TSOP | Dotaz |
 |
PMZ130UNEYL | Nexperia USA Inc. | MOSFET N-CH 20V SOT883 | Dotaz |
 |
SUD50N10-18P-E3 | Vishay Siliconix | MOSFET N-CH 100V 8.2A TO252 | Dotaz |
|
SUD50N04-05L-E3 | Vishay Siliconix | MOSFET N-CH 40V 115A TO252 | Dotaz |
|
SI4435DYTRPBF | Infineon Technologies | MOSFET P-CH 30V 8A 8-SOIC | Dotaz |
 |
STL10N3LLH5 | STMicroelectronics | MOSFET N-CH 30V 9A POWERFLAT | Dotaz |
 |
BSL307SP | Infineon Technologies | MOSFET P-CH 30V 5.5A 6-TSOP | Dotaz |
|
IXTK170P10P | IXYS | MOSFET P-CH 100V 170A TO-264 | Dotaz |
 |
FMD21-05QC | IXYS | MOSFET N-CH 500V 21A I4-PAC-5 | Dotaz |
Latest News
- Xilinx Ships Industry's First 16nm All Programmable MPSoC Ahead of Schedule
- Xilinx and Samsung Jointly Enable the World's First 5G NR Commercial Deployment
- TI to reduce costs in Wireless business; OMAP™ processors and wireless connectivity solutions will focus on embedded markets
- TI's Peter Balyta to head Education Technology division; Melendy Lovett to retire
- Janet Clark to join TI board of directors
- TI unveils DLP® 0.66-inch 4K ultra-high definition (UHD) chip, enabling more affordable large screen projection displays for home, business and education
- GCHQ Director calls for international cyber pact
- Embedded World: Arm introduces fourth security element to PSA
- Last chance: Nominate BrightSparks before 28 February
- Embedded World 2019: Get the full Electronics Weekly Guide
- "Xcell Journal" Special Edition: Xilinx Customers Shape a Brilliant Future
- Xilinx Launches Public Access of the SDSoC Development Environment to Expand Zynq SoC User Base to Broad Community of Systems and Software Engineers