Koupit NE3517S03-T1C-A s BYCHPS
Koupit se zárukou
NE3517S03-T1C-A
- Part Number:
- NE3517S03-T1C-A
- Popis:
- FET RF 4V 20GHZ S03
- Stav volného vedení / RoHS:
- Bez olova / V souladu RoHS
- dostupné množství:
- 15656 Pieces
- Datový list:
- NE3517S03-T1C-A.pdf
Úvod
BYCHIPS je distribuční odrůda pro NE3517S03-T1C-A, máme zásoby pro okamžitou přepravu a také k dispozici pro dlouhodobé zásobování. Zašlete nám svůj plán nákupu NE3517S03-T1C-A e-mailem vám poskytneme nejlepší cenu podle svého plánu.
Specifikace
| Napětí - Test: | 2V |
|---|---|
| Napětí - Jmenovitá: | 4V |
| Transistor Type: | HFET |
| Dodavatel zařízení Package: | S03 |
| Série: | - |
| Power - Výstup: | - |
| Obal: | Tape & Reel (TR) |
| Paket / krabice: | 4-SMD, Flat Leads |
| hluk Obrázek: | 0.7dB |
| Úroveň citlivosti na vlhkost (MSL): | 1 (Unlimited) |
| Výrobní číslo výrobce: | NE3517S03-T1C-A |
| Získat: | 13.5dB |
| Frekvence: | 20GHz |
| Rozšířený popis: | RF Mosfet HFET 2V 10mA 20GHz 13.5dB S03 |
| Popis: | FET RF 4V 20GHZ S03 |
| Jmenovitá hodnota proudu: | 15mA |
| Aktuální - Test: | 10mA |
| Email: | [email protected] |
Související díly pro NE3517S03-T1C-A
| Obraz | Part Number | Výrobci | Popis | Pohled |
|---|---|---|---|---|
 |
NE3514S02-A | CEL | HJ-FET NCH 10DB S02 | Dotaz |
 |
GTVA261701FAV1R0XTMA1 | Infineon Technologies | GAN SIC | Dotaz |
|
NE3512S02-T1C-A | CEL | HJ-FET NCH 13.5DB S02 | Dotaz |
 |
NE3513M04-A | CEL | FET RF 4V 12GHZ M04 4SMD | Dotaz |
|
PTFB182503ELV1R0XTMA1 | Infineon Technologies | IC AMP RF LDMOS H-33288-6 | Dotaz |
|
PTFB192503ELV1R0XTMA1 | Infineon Technologies | IC AMP RF LDMOS H-33288-6 | Dotaz |
|
NE3511S02-A | CEL | HJ-FET NCH 13.5DB S02 | Dotaz |
|
NE3516S02-A | CEL | IC HJ-FET RF N-CH S02 4-MICROX | Dotaz |
|
NE3516S02-T1C-A | CEL | IC HJ-FET RF N-CH S02 4-MICROX | Dotaz |
|
NE3513M04-T2-A | CEL | FET RF 4V 12GHZ M04 4SMD | Dotaz |
 |
AFT05MS031GNR1 | NXP USA Inc. | FET RF 40V 520MHZ TO270-2G | Dotaz |
 |
NE3513M04-T2B-A | CEL | FET RF 4V 12GHZ M04 4SMD | Dotaz |
|
NE3510M04-A | CEL | FET RF 4V 4GHZ M04 | Dotaz |
|
NE3510M04-T2-A | CEL | FET RF 4V 4GHZ M04 | Dotaz |
|
NE3515S02-A | CEL | FET RF HFET 12GHZ 2V 10MA S02 | Dotaz |
|
NE3512S02-A | CEL | HJ-FET NCH 13.5DB S02 | Dotaz |
|
NE3515S02-T1C-A | CEL | FET RF HFET 12GHZ 2V 10MA S02 | Dotaz |
|
NE3511S02-T1C-A | CEL | IC AMP RF LNA 13.5DB S02 | Dotaz |
|
NE3515S02-T1D-A | CEL | FET RF HFET 12GHZ 2V 10MA S02 | Dotaz |
|
NE3514S02-T1C-A | CEL | HJ-FET NCH 10DB S02 | Dotaz |
Latest News
- Xilinx Ships Industry's First 16nm All Programmable MPSoC Ahead of Schedule
- Xilinx and Samsung Jointly Enable the World's First 5G NR Commercial Deployment
- TI's Peter Balyta to head Education Technology division; Melendy Lovett to retire
- Janet Clark to join TI board of directors
- TI unveils DLP® 0.66-inch 4K ultra-high definition (UHD) chip, enabling more affordable large screen projection displays for home, business and education
- GCHQ Director calls for international cyber pact
- Embedded World: Arm introduces fourth security element to PSA
- Last chance: Nominate BrightSparks before 28 February
- Embedded World 2019: Get the full Electronics Weekly Guide
- "Xcell Journal" Special Edition: Xilinx Customers Shape a Brilliant Future
- Xilinx Launches Public Access of the SDSoC Development Environment to Expand Zynq SoC User Base to Broad Community of Systems and Software Engineers
- Texas Instruments names Haviv Ilan senior vice president of High Performance Analog