Koupit JAN1N6631U s BYCHPS
Koupit se zárukou
JAN1N6631U
- Part Number:
- JAN1N6631U
- Výrobce:
- Microsemi
- Popis:
- DIODE GEN PURP 1KV 1.4A E-MELF
- Stav volného vedení / RoHS:
- Obsahuje olověný / RoHS neodpovídající
- dostupné množství:
- 16600 Pieces
- Datový list:
- JAN1N6631U.pdf
Úvod
BYCHIPS je distribuční odrůda pro JAN1N6631U, máme zásoby pro okamžitou přepravu a také k dispozici pro dlouhodobé zásobování. Zašlete nám svůj plán nákupu JAN1N6631U e-mailem vám poskytneme nejlepší cenu podle svého plánu.
Specifikace
| Napětí - Forward (VF) (Max) @-li: | 1.6V @ 1.4A |
|---|---|
| Napětí - DC Reverse (Vr) (Max): | 1000V (1kV) |
| Dodavatel zařízení Package: | D-5B |
| Rychlost: | Fast Recovery = 200mA (Io) |
| Série: | Military, MIL-PRF-19500/590 |
| Reverse Time Recovery (TRR): | 60ns |
| Obal: | Bulk |
| Paket / krabice: | SQ-MELF, E |
| Ostatní jména: | 1086-19999 1086-19999-MIL |
| Provozní teplota - spojení: | -65°C ~ 150°C |
| Typ montáže: | Surface Mount |
| Úroveň citlivosti na vlhkost (MSL): | 1 (Unlimited) |
| Výrobní číslo výrobce: | JAN1N6631U |
| Rozšířený popis: | Diode Standard 1000V (1kV) 1.4A Surface Mount D-5B |
| Diode Type: | Standard |
| Popis: | DIODE GEN PURP 1KV 1.4A E-MELF |
| Proud - zpìtný únikový @ Vr: | 4µA @ 1000V |
| Proud - Průměrná Rektifikova (Io): | 1.4A |
| Kapacitní @ Vr, F: | - |
| Email: | [email protected] |
Související díly pro JAN1N6631U
| Obraz | Part Number | Výrobci | Popis | Pohled |
|---|---|---|---|---|
 |
JAN1N6631US | Microsemi Corporation | DIODE GEN PURP 1.1KV 1.4A D5B | Dotaz |
 |
JAN1N6638U | Microsemi Corporation | DIODE GEN PURP 150V 300MA B-MELF | Dotaz |
|
JAN1N6631 | Microsemi Corporation | DIODE GEN PURP 1.1KV 1.4A AXIAL | Dotaz |
|
JAN1N6638US | Microsemi Corporation | DIODE GEN PURP 150V 300MA D-MELF | Dotaz |
|
JAN1N6630US | Microsemi Corporation | DIODE GEN PURP 900V 1.4A E-MELF | Dotaz |
 |
JAN1N6661US | Microsemi Corporation | DIODE GEN PURP 225V 500MA D5A | Dotaz |
|
JAN1N6640US | Microsemi Corporation | DIODE GEN PURP 50V 300MA B-MELF | Dotaz |
|
JAN1N6625U | Microsemi Corporation | DIODE GEN PURP 1KV 1A A-MELF | Dotaz |
|
JAN1N6626 | Microsemi Corporation | DIODE GEN PURP 220V 1.75A AXIAL | Dotaz |
|
JAN1N6638 | Microsemi Corporation | DIODE GEN PURP 150V 300MA AXIAL | Dotaz |
|
JAN1N6639 | Microsemi Corporation | DIODE GEN PURP 75V 300MA AXIAL | Dotaz |
|
JAN1N6630 | Microsemi Corporation | DIODE GEN PURP 900V 1.4A AXIAL | Dotaz |
|
JAN1N6630U | Microsemi Corporation | DIODE GEN PURP 900V 1.4A E-MELF | Dotaz |
|
JAN1N6639US | Microsemi Corporation | DIODE GEN PURP 75V 300MA B-MELF | Dotaz |
|
JAN1N6660DT1 | Microsemi Corporation | DIODE ARRAY SCHOTTKY 45V TO254AA | Dotaz |
|
JAN1N6622 | Microsemi Corporation | DIODE GEN PURP 660V 2A AXIAL | Dotaz |
Latest News
- Xilinx Ships Industry's First 16nm All Programmable MPSoC Ahead of Schedule
- Xilinx and Samsung Jointly Enable the World's First 5G NR Commercial Deployment
- TI to reduce costs in Wireless business; OMAP™ processors and wireless connectivity solutions will focus on embedded markets
- TI's Peter Balyta to head Education Technology division; Melendy Lovett to retire
- Janet Clark to join TI board of directors
- TI unveils DLP® 0.66-inch 4K ultra-high definition (UHD) chip, enabling more affordable large screen projection displays for home, business and education
- GCHQ Director calls for international cyber pact
- Embedded World: Arm introduces fourth security element to PSA
- Last chance: Nominate BrightSparks before 28 February
- Embedded World 2019: Get the full Electronics Weekly Guide
- "Xcell Journal" Special Edition: Xilinx Customers Shape a Brilliant Future
- Xilinx Launches Public Access of the SDSoC Development Environment to Expand Zynq SoC User Base to Broad Community of Systems and Software Engineers