Koupit JAN1N5811US s BYCHPS
Koupit se zárukou
JAN1N5811US
- Part Number:
- JAN1N5811US
- Výrobce:
- Microsemi
- Popis:
- DIODE GEN PURP 150V 6A B-MELF
- Stav volného vedení / RoHS:
- Obsahuje olověný / RoHS neodpovídající
- dostupné množství:
- 19235 Pieces
- Datový list:
- JAN1N5811US.pdf
Úvod
BYCHIPS je distribuční odrůda pro JAN1N5811US, máme zásoby pro okamžitou přepravu a také k dispozici pro dlouhodobé zásobování. Zašlete nám svůj plán nákupu JAN1N5811US e-mailem vám poskytneme nejlepší cenu podle svého plánu.
Specifikace
| Napětí - Forward (VF) (Max) @-li: | 875mV @ 4A |
|---|---|
| Napětí - DC Reverse (Vr) (Max): | 150V |
| Dodavatel zařízení Package: | B, SQ-MELF |
| Rychlost: | Fast Recovery = 200mA (Io) |
| Série: | Military, MIL-PRF-19500/477 |
| Reverse Time Recovery (TRR): | 30ns |
| Obal: | Bulk |
| Paket / krabice: | SQ-MELF, B |
| Ostatní jména: | 1086-2127 1086-2127-MIL Q9178857 |
| Provozní teplota - spojení: | -65°C ~ 175°C |
| Typ montáže: | Surface Mount |
| Úroveň citlivosti na vlhkost (MSL): | 1 (Unlimited) |
| Výrobní číslo výrobce: | JAN1N5811US |
| Rozšířený popis: | Diode Standard 150V 6A Surface Mount B, SQ-MELF |
| Diode Type: | Standard |
| Popis: | DIODE GEN PURP 150V 6A B-MELF |
| Proud - zpìtný únikový @ Vr: | 5µA @ 150V |
| Proud - Průměrná Rektifikova (Io): | 6A |
| Kapacitní @ Vr, F: | 60pF @ 10V, 1MHz |
| Email: | [email protected] |
Související díly pro JAN1N5811US
| Obraz | Part Number | Výrobci | Popis | Pohled |
|---|---|---|---|---|
 |
JAN1N5807US | Microsemi Corporation | DIODE GEN PURP 50V 6A B-MELF | Dotaz |
|
JAN1N5816 | Microsemi Corporation | DIODE GEN PURP 150V 20A DO203AA | Dotaz |
|
JAN1N5811URS | Microsemi Corporation | DIODE GEN PURP 150V 3A BPKG | Dotaz |
|
JAN1N5811 | Microsemi Corporation | DIODE GEN PURP 150V 6A AXIAL | Dotaz |
|
JAN1N5807 | Microsemi Corporation | DIODE GEN PURP 50V 6A AXIAL | Dotaz |
 |
JAN1N5819-1 | Microsemi Corporation | DIODE SCHOTTKY 45V 1A DO41 | Dotaz |
|
JAN1N5814 | Microsemi Corporation | DIODE GEN PURP 100V 20A DO203AA | Dotaz |
 |
JAN1N5822 | Microsemi Corporation | DIODE SCHOTTKY 40V 3A AXIAL | Dotaz |
|
JAN1N5806URS | Microsemi Corporation | DIODE GEN PURP 150V 1A APKG | Dotaz |
|
JAN1N5802URS | Microsemi Corporation | DIODE GEN PURP 50V 1A APKG | Dotaz |
 |
JAN1N5819UR-1 | Microsemi Corporation | DIODE SCHOTTKY 45V 1A DO213AB | Dotaz |
|
JAN1N5804URS | Microsemi Corporation | DIODE GEN PURP 100V 1A APKG | Dotaz |
|
JAN1N5804 | Microsemi Corporation | DIODE GEN PURP 100V 2.5A AXIAL | Dotaz |
|
JAN1N5802 | Microsemi Corporation | DIODE GEN PURP 50V 2.5A AXIAL | Dotaz |
Latest News
- Xilinx Ships Industry's First 16nm All Programmable MPSoC Ahead of Schedule
- Xilinx and Samsung Jointly Enable the World's First 5G NR Commercial Deployment
- TI to reduce costs in Wireless business; OMAP™ processors and wireless connectivity solutions will focus on embedded markets
- TI's Peter Balyta to head Education Technology division; Melendy Lovett to retire
- Janet Clark to join TI board of directors
- TI unveils DLP® 0.66-inch 4K ultra-high definition (UHD) chip, enabling more affordable large screen projection displays for home, business and education
- GCHQ Director calls for international cyber pact
- Embedded World: Arm introduces fourth security element to PSA
- Last chance: Nominate BrightSparks before 28 February
- Embedded World 2019: Get the full Electronics Weekly Guide
- "Xcell Journal" Special Edition: Xilinx Customers Shape a Brilliant Future
- Xilinx Launches Public Access of the SDSoC Development Environment to Expand Zynq SoC User Base to Broad Community of Systems and Software Engineers