Koupit IPW65R190C6FKSA1 s BYCHPS
Koupit se zárukou
IPW65R190C6FKSA1
- Part Number:
- IPW65R190C6FKSA1
- Popis:
- MOSFET N-CH 650V 20.2A TO247
- Stav volného vedení / RoHS:
- Bez olova / V souladu RoHS
- dostupné množství:
- 14166 Pieces
- Datový list:
- IPW65R190C6FKSA1.pdf
Úvod
BYCHIPS je distribuční odrůda pro IPW65R190C6FKSA1, máme zásoby pro okamžitou přepravu a také k dispozici pro dlouhodobé zásobování. Zašlete nám svůj plán nákupu IPW65R190C6FKSA1 e-mailem vám poskytneme nejlepší cenu podle svého plánu.
Specifikace
| Vgs (th) (max) 'Id: | 3.5V @ 730µA |
|---|---|
| Technika: | MOSFET (Metal Oxide) |
| Dodavatel zařízení Package: | PG-TO247-3 |
| Série: | CoolMOS™ |
| RDS On (Max) @ Id, Vgs: | 190 mOhm @ 7.3A, 10V |
| Ztráta energie (Max): | 151W (Tc) |
| Obal: | Tube |
| Paket / krabice: | TO-247-3 |
| Ostatní jména: | IPW65R190C6 IPW65R190C6-ND SP000863902 |
| Provozní teplota: | -55°C ~ 150°C (TJ) |
| Typ montáže: | Through Hole |
| Úroveň citlivosti na vlhkost (MSL): | 1 (Unlimited) |
| Výrobní standardní doba výroby: | 12 Weeks |
| Výrobní číslo výrobce: | IPW65R190C6FKSA1 |
| Vstupní kapacita (Ciss) (Max) @ Vds: | 1620pF @ 100V |
| Nabíjení brány (Qg) (Max) @ Vgs: | 73nC @ 10V |
| Typ FET: | N-Channel |
| FET Feature: | - |
| Rozšířený popis: | N-Channel 650V 20.2A (Tc) 151W (Tc) Through Hole PG-TO247-3 |
| Drain na zdroj napětí (Vdss): | 650V |
| Popis: | MOSFET N-CH 650V 20.2A TO247 |
| Proud - kontinuální odtok (Id) @ 25 ° C: | 20.2A (Tc) |
| Email: | [email protected] |
Související díly pro IPW65R190C6FKSA1
| Obraz | Part Number | Výrobci | Popis | Pohled |
|---|---|---|---|---|
 |
IPW65R125C7XKSA1 | Infineon Technologies | MOSFET N-CH 650V TO247 | Dotaz |
|
IPW65R150CFDFKSA1 | Infineon Technologies | MOSFET N-CH 650V TO247 | Dotaz |
|
IPW65R190CFD | Infineon Technologies | MOSFET N-CH 650V 17.5A TO247 | Dotaz |
|
IPW65R110CFD | Infineon Technologies | MOSFET N-CH 650V 31.2A TO247 | Dotaz |
|
IPW65R190C7XKSA1 | Infineon Technologies | MOSFET N-CH 650V 20.2A TO247 | Dotaz |
|
IPW65R190E6FKSA1 | Infineon Technologies | MOSFET N-CH 650V 20.2A TO247 | Dotaz |
|
IPW65R190CFDAFKSA1 | Infineon Technologies | MOSFET N-CH 650V 17.5A TO247 | Dotaz |
|
IPW65R041CFD | Infineon Technologies | MOSFET N CH 650V 68.5A PG-TO247 | Dotaz |
|
IPW65R420CFDFKSA1 | Infineon Technologies | MOSFET N-CH 650V 8.7A TO247 | Dotaz |
|
IPW65R150CFDAFKSA1 | Infineon Technologies | MOSFET N-CH 650V TO247 | Dotaz |
|
IPW65R099C6FKSA1 | Infineon Technologies | MOSFET N-CH 650V 38A TO-247 | Dotaz |
|
IPW65R110CFDAFKSA1 | Infineon Technologies | MOSFET N-CH 650V 31.2A TO247 | Dotaz |
Latest News
- Xilinx Ships Industry's First 16nm All Programmable MPSoC Ahead of Schedule
- Xilinx and Samsung Jointly Enable the World's First 5G NR Commercial Deployment
- TI's Peter Balyta to head Education Technology division; Melendy Lovett to retire
- Janet Clark to join TI board of directors
- TI unveils DLP® 0.66-inch 4K ultra-high definition (UHD) chip, enabling more affordable large screen projection displays for home, business and education
- GCHQ Director calls for international cyber pact
- Embedded World: Arm introduces fourth security element to PSA
- Last chance: Nominate BrightSparks before 28 February
- Embedded World 2019: Get the full Electronics Weekly Guide
- "Xcell Journal" Special Edition: Xilinx Customers Shape a Brilliant Future
- Xilinx Launches Public Access of the SDSoC Development Environment to Expand Zynq SoC User Base to Broad Community of Systems and Software Engineers
- Texas Instruments names Haviv Ilan senior vice president of High Performance Analog