Koupit IPD65R660CFDAATMA1 s BYCHPS
Koupit se zárukou
IPD65R660CFDAATMA1
- Part Number:
- IPD65R660CFDAATMA1
- Popis:
- MOSFET N-CH TO252-3
- Stav volného vedení / RoHS:
- Bez olova / V souladu RoHS
- dostupné množství:
- 15617 Pieces
- Datový list:
- IPD65R660CFDAATMA1.pdf
Úvod
BYCHIPS je distribuční odrůda pro IPD65R660CFDAATMA1, máme zásoby pro okamžitou přepravu a také k dispozici pro dlouhodobé zásobování. Zašlete nám svůj plán nákupu IPD65R660CFDAATMA1 e-mailem vám poskytneme nejlepší cenu podle svého plánu.
Specifikace
| Vgs (th) (max) 'Id: | 4.5V @ 214.55µA |
|---|---|
| Technika: | MOSFET (Metal Oxide) |
| Dodavatel zařízení Package: | PG-TO252-3 |
| Série: | Automotive, AEC-Q101, CoolMOS™ |
| RDS On (Max) @ Id, Vgs: | 660 mOhm @ 3.22A, 10V |
| Ztráta energie (Max): | 62.5W (Tc) |
| Obal: | Tape & Reel (TR) |
| Paket / krabice: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Ostatní jména: | SP000928260 |
| Provozní teplota: | -40°C ~ 150°C (TJ) |
| Typ montáže: | Surface Mount |
| Úroveň citlivosti na vlhkost (MSL): | 1 (Unlimited) |
| Výrobní standardní doba výroby: | 16 Weeks |
| Výrobní číslo výrobce: | IPD65R660CFDAATMA1 |
| Vstupní kapacita (Ciss) (Max) @ Vds: | 543pF @ 100V |
| Nabíjení brány (Qg) (Max) @ Vgs: | 20nC @ 10V |
| Typ FET: | N-Channel |
| FET Feature: | - |
| Rozšířený popis: | N-Channel 650V 6A (Tc) 62.5W (Tc) Surface Mount PG-TO252-3 |
| Drain na zdroj napětí (Vdss): | 650V |
| Popis: | MOSFET N-CH TO252-3 |
| Proud - kontinuální odtok (Id) @ 25 ° C: | 6A (Tc) |
| Email: | [email protected] |
Související díly pro IPD65R660CFDAATMA1
| Obraz | Part Number | Výrobci | Popis | Pohled |
|---|---|---|---|---|
 |
IPD65R660CFDATMA1 | Infineon Technologies | MOSFET N-CH 650V 6A TO252 | Dotaz |
|
IPD65R650CEAUMA1 | Infineon Technologies | MOSFET N-CH 650V 7A TO-252 | Dotaz |
|
IPD65R380C6BTMA1 | Infineon Technologies | MOSFET N-CH 650V 10.6A TO252-3 | Dotaz |
|
IPD65R400CEAUMA1 | Infineon Technologies | MOSFET N-CH 650V TO-252 | Dotaz |
|
IPD65R380E6ATMA1 | Infineon Technologies | MOSFET N-CH 650V 10.6A TO252 | Dotaz |
|
IPD65R600E6BTMA1 | Infineon Technologies | MOSFET N-CH 650V 7.3A TO252-3 | Dotaz |
|
IPD65R600E6ATMA1 | Infineon Technologies | MOSFET N-CH 650V 7.3A TO252-3 | Dotaz |
|
IPD65R650CEATMA1 | Infineon Technologies | MOSFET N-CH 650V 10.1A TO252 | Dotaz |
 |
IPD65R600C6ATMA1 | Infineon Technologies | LOW POWER_LEGACY | Dotaz |
|
IPD65R1K4CFDATMA1 | Infineon Technologies | MOSFET N-CH 650V 2.8A TO-252 | Dotaz |
|
IPD65R660CFDBTMA1 | Infineon Technologies | MOSFET N-CH 650V 6A TO252 | Dotaz |
|
IPD65R600C6 | Infineon Technologies | MOSFET N-CH 650V 7.3A TO252 | Dotaz |
|
IPD65R600C6BTMA1 | Infineon Technologies | MOSFET N-CH 650V 7.3A TO252 | Dotaz |
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