Koupit IPB65R190C6ATMA1 s BYCHPS
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IPB65R190C6ATMA1
- Part Number:
- IPB65R190C6ATMA1
- Popis:
- MOSFET N-CH 650V 20.2A TO263
- Stav volného vedení / RoHS:
- Bez olova / V souladu RoHS
- dostupné množství:
- 18648 Pieces
- Datový list:
- IPB65R190C6ATMA1.pdf
Úvod
BYCHIPS je distribuční odrůda pro IPB65R190C6ATMA1, máme zásoby pro okamžitou přepravu a také k dispozici pro dlouhodobé zásobování. Zašlete nám svůj plán nákupu IPB65R190C6ATMA1 e-mailem vám poskytneme nejlepší cenu podle svého plánu.
Specifikace
| Vgs (th) (max) 'Id: | 3.5V @ 730µA |
|---|---|
| Technika: | MOSFET (Metal Oxide) |
| Dodavatel zařízení Package: | PG-TO263 |
| Série: | CoolMOS™ |
| RDS On (Max) @ Id, Vgs: | 190 mOhm @ 7.3A, 10V |
| Ztráta energie (Max): | 151W (Tc) |
| Obal: | Tape & Reel (TR) |
| Paket / krabice: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Ostatní jména: | IPB65R190C6 IPB65R190C6-ND IPB65R190C6TR-ND SP000863890 |
| Provozní teplota: | -55°C ~ 150°C (TJ) |
| Typ montáže: | Surface Mount |
| Úroveň citlivosti na vlhkost (MSL): | 1 (Unlimited) |
| Výrobní standardní doba výroby: | 12 Weeks |
| Výrobní číslo výrobce: | IPB65R190C6ATMA1 |
| Vstupní kapacita (Ciss) (Max) @ Vds: | 1620pF @ 100V |
| Nabíjení brány (Qg) (Max) @ Vgs: | 73nC @ 10V |
| Typ FET: | N-Channel |
| FET Feature: | - |
| Rozšířený popis: | N-Channel 650V 20.2A (Tc) 151W (Tc) Surface Mount PG-TO263 |
| Drain na zdroj napětí (Vdss): | 650V |
| Popis: | MOSFET N-CH 650V 20.2A TO263 |
| Proud - kontinuální odtok (Id) @ 25 ° C: | 20.2A (Tc) |
| Email: | [email protected] |
Související díly pro IPB65R190C6ATMA1
| Obraz | Part Number | Výrobci | Popis | Pohled |
|---|---|---|---|---|
 |
IPB65R190C7ATMA1 | Infineon Technologies | MOSFET N-CH TO263-3 | Dotaz |
|
IPB65R190CFD | Infineon Technologies | MOSFET N-CH 650V 17.5A TO263 | Dotaz |
|
IPB65R110CFDAATMA1 | Infineon Technologies | MOSFET N-CH TO263-3 | Dotaz |
|
IPB65R150CFDATMA1 | Infineon Technologies | MOSFET N-CH 650V 22.4A TO-263 | Dotaz |
|
IPB65R150CFDAATMA1 | Infineon Technologies | MOSFET N-CH TO263-3 | Dotaz |
|
IPB65R110CFD | Infineon Technologies | MOSFET N-CH 650V 31.2A TO263 | Dotaz |
|
IPB65R190CFDAATMA1 | Infineon Technologies | MOSFET N-CH TO263-3 | Dotaz |
|
IPB65R125C7ATMA1 | Infineon Technologies | MOSFET N-CH TO263-3 | Dotaz |
|
IPB65R380C6ATMA1 | Infineon Technologies | MOSFET N-CH 650V 10.6A TO263 | Dotaz |
|
IPB65R600C6ATMA1 | Infineon Technologies | MOSFET N-CH 650V 7.3A TO263 | Dotaz |
|
IPB65R099C6ATMA1 | Infineon Technologies | MOSFET N-CH 650V 38A TO263 | Dotaz |
|
IPB65R280E6ATMA1 | Infineon Technologies | MOSFET N-CH TO263-3 | Dotaz |
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