Koupit FQD1N60TM s BYCHPS
Koupit se zárukou
FQD1N60TM
- Part Number:
- FQD1N60TM
- Výrobce:
- Fairchild/ON Semiconductor
- Popis:
- MOSFET N-CH 600V 1A DPAK
- Stav volného vedení / RoHS:
- Bez olova / V souladu RoHS
- dostupné množství:
- 13959 Pieces
- Datový list:
- 1.FQD1N60TM.pdf2.FQD1N60TM.pdf
Úvod
BYCHIPS je distribuční odrůda pro FQD1N60TM, máme zásoby pro okamžitou přepravu a také k dispozici pro dlouhodobé zásobování. Zašlete nám svůj plán nákupu FQD1N60TM e-mailem vám poskytneme nejlepší cenu podle svého plánu.
Specifikace
| Vgs (th) (max) 'Id: | 5V @ 250µA |
|---|---|
| Technika: | MOSFET (Metal Oxide) |
| Dodavatel zařízení Package: | D-Pak |
| Série: | QFET® |
| RDS On (Max) @ Id, Vgs: | 11.5 Ohm @ 500mA, 10V |
| Ztráta energie (Max): | 2.5W (Ta), 30W (Tc) |
| Obal: | Tape & Reel (TR) |
| Paket / krabice: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Provozní teplota: | -55°C ~ 150°C (TJ) |
| Typ montáže: | Surface Mount |
| Úroveň citlivosti na vlhkost (MSL): | 1 (Unlimited) |
| Výrobní číslo výrobce: | FQD1N60TM |
| Vstupní kapacita (Ciss) (Max) @ Vds: | 150pF @ 25V |
| Nabíjení brány (Qg) (Max) @ Vgs: | 6nC @ 10V |
| Typ FET: | N-Channel |
| FET Feature: | - |
| Rozšířený popis: | N-Channel 600V 1A (Tc) 2.5W (Ta), 30W (Tc) Surface Mount D-Pak |
| Drain na zdroj napětí (Vdss): | 600V |
| Popis: | MOSFET N-CH 600V 1A DPAK |
| Proud - kontinuální odtok (Id) @ 25 ° C: | 1A (Tc) |
| Email: | [email protected] |
Související díly pro FQD1N60TM
| Obraz | Part Number | Výrobci | Popis | Pohled |
|---|---|---|---|---|
 |
FQD1N60CTF | Fairchild/ON Semiconductor | MOSFET N-CH 600V 1A DPAK | Dotaz |
|
FQD1N80TM | Fairchild/ON Semiconductor | MOSFET N-CH 800V 1A DPAK | Dotaz |
 |
BUK6510-75C,127 | NXP USA Inc. | MOSFET N-CH 75V 77A TO220AB | Dotaz |
|
FQD1N60TF | Fairchild/ON Semiconductor | MOSFET N-CH 600V 1A DPAK | Dotaz |
|
FQD1N50TF | Fairchild/ON Semiconductor | MOSFET N-CH 500V 1.1A DPAK | Dotaz |
|
FQD1N60CTM | Fairchild/ON Semiconductor | MOSFET N-CH 600V 1A DPAK | Dotaz |
 |
IRL40B212 | Infineon Technologies | MOSFET N-CH 40V 195A | Dotaz |
 |
AO4354 | Alpha & Omega Semiconductor Inc. | MOSFET N-CH 30V 23A 8SOIC | Dotaz |
 |
IXFH80N25X3 | IXYS | MOSFET N-CH 250V 80A TO247 | Dotaz |
 |
STW40NF20 | STMicroelectronics | MOSFET N-CH 200V 40A TO-247 | Dotaz |
 |
NTD4959N-35G | ON Semiconductor | MOSFET N-CH 30V 9A IPAK | Dotaz |
|
FQD1N80TF | Fairchild/ON Semiconductor | MOSFET N-CH 800V 1A DPAK | Dotaz |
 |
STP24NM65N | STMicroelectronics | MOSFET N-CH 650V 19A TO-220 | Dotaz |
|
FQD1N50TM | Fairchild/ON Semiconductor | MOSFET N-CH 500V 1.1A DPAK | Dotaz |
Latest News
- Xilinx Ships Industry's First 16nm All Programmable MPSoC Ahead of Schedule
- Xilinx and Samsung Jointly Enable the World's First 5G NR Commercial Deployment
- TI to reduce costs in Wireless business; OMAP™ processors and wireless connectivity solutions will focus on embedded markets
- TI's Peter Balyta to head Education Technology division; Melendy Lovett to retire
- Janet Clark to join TI board of directors
- TI unveils DLP® 0.66-inch 4K ultra-high definition (UHD) chip, enabling more affordable large screen projection displays for home, business and education
- GCHQ Director calls for international cyber pact
- Embedded World: Arm introduces fourth security element to PSA
- Last chance: Nominate BrightSparks before 28 February
- Embedded World 2019: Get the full Electronics Weekly Guide
- "Xcell Journal" Special Edition: Xilinx Customers Shape a Brilliant Future
- Xilinx Launches Public Access of the SDSoC Development Environment to Expand Zynq SoC User Base to Broad Community of Systems and Software Engineers