Koupit DMN61D9UW-13 s BYCHPS
Koupit se zárukou
DMN61D9UW-13
- Part Number:
- DMN61D9UW-13
- Výrobce:
- Diodes Incorporated
- Popis:
- MOSFET N-CH 60V 0.34A SOT323
- Stav volného vedení / RoHS:
- Bez olova / V souladu RoHS
- dostupné množství:
- 13223 Pieces
- Datový list:
- DMN61D9UW-13.pdf
Úvod
BYCHIPS je distribuční odrůda pro DMN61D9UW-13, máme zásoby pro okamžitou přepravu a také k dispozici pro dlouhodobé zásobování. Zašlete nám svůj plán nákupu DMN61D9UW-13 e-mailem vám poskytneme nejlepší cenu podle svého plánu.
Specifikace
| Vgs (th) (max) 'Id: | 1V @ 250µA |
|---|---|
| Technika: | MOSFET (Metal Oxide) |
| Dodavatel zařízení Package: | SOT-323 |
| Série: | - |
| RDS On (Max) @ Id, Vgs: | 2 Ohm @ 50mA, 5V |
| Ztráta energie (Max): | 320mW (Ta) |
| Obal: | Tape & Reel (TR) |
| Paket / krabice: | SC-70, SOT-323 |
| Ostatní jména: | DMN61D9UW-13DI |
| Provozní teplota: | -55°C ~ 150°C (TJ) |
| Typ montáže: | Surface Mount |
| Úroveň citlivosti na vlhkost (MSL): | 1 (Unlimited) |
| Výrobní standardní doba výroby: | 8 Weeks |
| Výrobní číslo výrobce: | DMN61D9UW-13 |
| Vstupní kapacita (Ciss) (Max) @ Vds: | 28.5pF @ 30V |
| Nabíjení brány (Qg) (Max) @ Vgs: | 0.4nC @ 4.5V |
| Typ FET: | N-Channel |
| FET Feature: | - |
| Rozšířený popis: | N-Channel 60V 340mA (Ta) 320mW (Ta) Surface Mount SOT-323 |
| Drain na zdroj napětí (Vdss): | 60V |
| Popis: | MOSFET N-CH 60V 0.34A SOT323 |
| Proud - kontinuální odtok (Id) @ 25 ° C: | 340mA (Ta) |
| Email: | [email protected] |
Související díly pro DMN61D9UW-13
| Obraz | Part Number | Výrobci | Popis | Pohled |
|---|---|---|---|---|
 |
DMN61D9U-13 | Diodes Incorporated | MOSFET N-CH 60V 0.38A SOT23 | Dotaz |
 |
DMN61D8LVT-13 | Diodes Incorporated | MOSFET 2N-CH 60V 0.63A TSOT26 | Dotaz |
|
DMN6140L-13 | Diodes Incorporated | MOSFET N-CH 60V 1.6A SOT23 | Dotaz |
|
DMN6140LQ-7 | Diodes Incorporated | MOSFET N-CH 60V 1.6A SOT23 | Dotaz |
|
DMN61D9U-7 | Diodes Incorporated | MOSFET N-CH 60V 0.38A | Dotaz |
 |
DMN61D9UDW-13 | Diodes Incorporated | MOSFET 2N-CH 60V 0.35A SOT363 | Dotaz |
|
DMN61D9UDW-7 | Diodes Incorporated | MOSFET 2N-CH 60V 0.35A | Dotaz |
|
DMN61D8LVT-7 | Diodes Incorporated | MOSFET 2N-CH 60V 0.63A TSOT26 | Dotaz |
 |
DMN61D9UW-7 | Diodes Incorporated | MOSFET N-CH 60V 0.34A | Dotaz |
 |
DMN61D8LQ-13 | Diodes Incorporated | MOSFET N-CH 60V SOT23 | Dotaz |
|
DMN61D8LVTQ-7 | Diodes Incorporated | MOSFET 2N-CH 60V 0.63A TSOT26 | Dotaz |
|
DMN6140L-7 | Diodes Incorporated | MOSFET N-CH 60V 1.6A SOT-23 | Dotaz |
|
DMN61D8LQ-7 | Diodes Incorporated | MOSFET N-CH 60V SOT23 | Dotaz |
|
DMN61D8L-13 | Diodes Incorporated | MOSFET N-CH 60V 0.47A SOT23 | Dotaz |
Latest News
- Xilinx Ships Industry's First 16nm All Programmable MPSoC Ahead of Schedule
- Xilinx and Samsung Jointly Enable the World's First 5G NR Commercial Deployment
- TI to reduce costs in Wireless business; OMAP™ processors and wireless connectivity solutions will focus on embedded markets
- TI's Peter Balyta to head Education Technology division; Melendy Lovett to retire
- Janet Clark to join TI board of directors
- TI unveils DLP® 0.66-inch 4K ultra-high definition (UHD) chip, enabling more affordable large screen projection displays for home, business and education
- GCHQ Director calls for international cyber pact
- Embedded World: Arm introduces fourth security element to PSA
- Last chance: Nominate BrightSparks before 28 February
- Embedded World 2019: Get the full Electronics Weekly Guide
- "Xcell Journal" Special Edition: Xilinx Customers Shape a Brilliant Future
- Xilinx Launches Public Access of the SDSoC Development Environment to Expand Zynq SoC User Base to Broad Community of Systems and Software Engineers